Recently there has been a growing interest in SiC on oxide integrated photonics platform, due to excellent linear and strong non-linear properties. Due to excellent thermal and mechanical properties, SiC devices are suitable for operations in harsh environments. In this work, we demonstrate the integration of two PCMs Ge2Sb2Te5 (GST) and Ag3In4Sb76Te17 (AIST) on a CMOS compatible amorphous SiC waveguide, grown using low-temperature CVD on oxide. We demonstrate a photonic memory, which can be programmed and accessed optically and we achieve multiple memory levels reliably on these devices. Furthermore, using time-resolved dynamic switching experiments we study the thermo-optical effects and switching speeds.
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