Effect of quantum-well number on the performance of GaSb-based type-I laser diodes grown on silicon

Andres Remis; Laura Monge; Guilhem Boissier; Jean-Baptiste Rodriguez; Laurent Cerutti; Eric Tournié

doi:10.1117/12.2607753

9 March 2022 Effect of quantum-well number on the performance of GaSb-based type-I laser diodes grown on silicon

Andres Remis, Laura Monge, Guilhem Boissier, Jean-Baptiste Rodriguez, Laurent Cerutti, Eric Tournié

Author Affiliations +

Proceedings Volume PC12021, Novel In-Plane Semiconductor Lasers XXI; PC120210I (2022) https://doi.org/10.1117/12.2607753
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

The integration on silicon of light sources emitting in the 2-5 µm wavelength range for sensing applications is currently under the focus of attention. In this work we have studied the influence of the quantum well number (from 1 to 4 QWs) on the performances of GaSb-based laser diodes grown on silicon and emitting at 2.3 µm. We have observed that – somewhat counterintuitively – the best performances in terms of threshold current and internal losses are achieved with 1 QW. The results will be discussed in comparison with similar laser diodes grown on native GaSb substrates.

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Citation Download Citation

Andres Remis, Laura Monge, Guilhem Boissier, Jean-Baptiste Rodriguez, Laurent Cerutti, and Eric Tournié "Effect of quantum-well number on the performance of GaSb-based type-I laser diodes grown on silicon", Proc. SPIE PC12021, Novel In-Plane Semiconductor Lasers XXI, PC120210I (9 March 2022); https://doi.org/10.1117/12.2607753

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