Effect of diffraction phase control for EUV phase shift mask

Dongmin Jeong; Deukgyu Kim; Yunsoo Kim; Minsun Cho; Jinho Ahn

doi:10.1117/12.2614362

13 June 2022 Effect of diffraction phase control for EUV phase shift mask

Dongmin Jeong, Deukgyu Kim, Yunsoo Kim, Minsun Cho, Jinho Ahn

Proceedings Volume PC12051, Optical and EUV Nanolithography XXXV; PC120510V (2022) https://doi.org/10.1117/12.2614362
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Conference Poster

Abstract

We improved EUV mask imaging performance through phase and amplitude optimization between 0th and 1st diffraction orders. A specific phase difference between the 0th and 1st diffraction orders can reduce the aerial image split and then improve the imaging performance. The optimum phase difference is 27 degrees in the 14 nm HP L/S pattern and 36 degrees in the 12 nm HP L/S pattern. This effect becomes more evident with the amplitude balancing between the two diffraction orders.

Citation Download Citation

Dongmin Jeong, Deukgyu Kim, Yunsoo Kim, Minsun Cho, and Jinho Ahn "Effect of diffraction phase control for EUV phase shift mask", Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC120510V (13 June 2022); https://doi.org/10.1117/12.2614362

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