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10 March 2023 Improving InGaP/GaAs dual junction photovoltaic efficiency with high quality InGaAs quantum wells (Conference Presentation)
Stephen J. Polly, Brandon Bogner, Anastasiia Fedorenko, Subhra Chowdhury, Dhrubes Biswas, Seth M. Hubbard
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Proceedings Volume PC12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII; PC124160A (2023) https://doi.org/10.1117/12.2655453
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
In this work, we incorporate 50 InGaAs quantum wells (QWs) into the bottom junction of an InGaP/GaAs dual junction solar cell. Tensile GaAsP is used to compensate the compressive wells, enabling high quality growth confirmed by high resolution XRD. A distributed Bragg reflector (DBR) is grown below the device, centered on the QW absorptive region for improved optical path length in the QWs. These structures enable an increase of 2.6 mA/cm² from sub-gap absorption with a minimal loss in voltage (11 mV) compared to a control device without QWs or DBR, providing an absolute efficiency increase of 3.6% under AM0.
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Stephen J. Polly, Brandon Bogner, Anastasiia Fedorenko, Subhra Chowdhury, Dhrubes Biswas, and Seth M. Hubbard "Improving InGaP/GaAs dual junction photovoltaic efficiency with high quality InGaAs quantum wells (Conference Presentation)", Proc. SPIE PC12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII, PC124160A (10 March 2023); https://doi.org/10.1117/12.2655453
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KEYWORDS
Quantum wells
Indium gallium arsenide
Photovoltaics
Quantum efficiency
Absorption
Control systems
Distributed Bragg reflectors
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