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III-nitride semiconductors (GaN and related alloys) triggered the 21st century lighting revolution thanks to the achievement of blue LEDs exhibiting remarkable performance, e.g., a wall-plug efficiency of 80%. Another striking feature of those compound semiconductors is their capability of covering the whole visible spectrum when alloying GaN with indium. De facto, a single material platform could be used to make RGB displays based on direct light emission. In addition, InGaN alloy - which is behind all blue and green LEDs- exhibits strong alloy disorder, which is highly beneficial for micron-size LEDs thanks to reduced carrier diffusion length.
In this talk, I will first present the current understanding of the physics of blue LEDs. This will bring me to the question of the “green-gap” and its relevance in light of recent results reported on InGaN red LEDs. Eventually, I will discuss challenges and opportunities offered by III-nitrides for RGB microLED displays.
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