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The unique material properties of Gallium Oxide make it promising for a range of future applications, but innovative materials and device engineering are needed to translate these ultimate material limits to real technology. This presentation will discuss our recent work on epitaxy, heterostructure design, and electrostatics to achieve high-performance β-Ga2O3 lateral and vertical electronic devices. We will discuss some advances in materials growth and device design for lateral structures which enabled key transistor demonstrations including the first β-(Al,Ga)2O3/β-Ga2O3 modulation-doped structures with excellent transport properties, double-heterostructure modulation-doped structures, scaled delta-doped transistors with cutoff frequency of 27 GHz, and self-aligned lateral field effect transistors with > 900 mA/mm current density. We will discuss the use of a new damage-free epitaxial etching technique using Ga atomic flux that enables highly precise fabrication of 3-dimensional structures. We will also show some applications of atomic Ga-flux etching to realize excellent field termination in vertical diodes, and lateral FINFETs with enhanced performance. Finally, we will discuss promising results using high-permittivity dielectrics integrated with semiconductors that have enabled lateral transistors with > 5.5 MV/cm breakdown field, the highest for a field effect transistor in any material system. We acknowledge funding from DOE/NNSA under Award Number(s) DE-NA000392, AFOSR GAME MURI (Award No. FA9550-18-1-0479, project manager Dr. Ali Sayir), and NSF ECCS-1809682.
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