Correlation of transport properties with charge trapping parameters in Cd0.9Zn0.1Te1-xSex room temperature gamma-ray detectors

Ritwik Nag; Sandeep K. Chaudhuri; Krishna C. Mandal

doi:10.1117/12.2682618

4 October 2023 Correlation of transport properties with charge trapping parameters in Cd_0.9Zn_0.1Te_1-xSe_x room temperature gamma-ray detectors

Ritwik Nag, Sandeep K. Chaudhuri, Krishna C. Mandal

Author Affiliations +

Proceedings Volume PC12696, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXV; PC1269604 (2023) https://doi.org/10.1117/12.2682618
Event: SPIE Optical Engineering + Applications, 2023, San Diego, California, United States

Abstract

Quaternary compound semiconductor Cd0.9Zn0.1Te1-xSex (CZTS) is emerging as the next generation room-temperature detector for radiation spectroscopy and imaging. CZTS is grown by inclusion of Se in small amount (2-3 at. %) in the CdZnTe (CZT) matrix during the crystal growth. Travelling heater method (THM) and Bridgman method (BM) grown CZTS ingots have shown high degree of axial and radial compositional homogeneity leading to crystal growth yield higher than 90% unforeseen in CZT. While the conventional growth methods produce large volume detector grade crystals, the achievable growth rate is typically low – 1-2 mm/day for THM and 1-2 mm/hr for BM. Vertical gradient freeze (VGF) method is an alternative growth method that can deliver much higher growth rates while maintaining the electronic quality of the crystals. We report an electron drift mobility of 1245 cm^2/V/s, measured in a VGF-grown Cd0.9Zn0.1Te0.97Se0.03 (CZTS) single crystal using a time-of-flight alpha spectroscopic method, which is 1.5 times higher than that reported for state-of-the-art CZTS crystals. A mobility-lifetime (μτ) product of ~1x10^-3 cm^2/V was calculated using a single polarity Hecht plot. Photo-induced deep level transient spectroscopy (PICTS) revealed the presence of several charge trapping centers in the temperature scan range 80 - 450 K. The study correlates the effect of the trap parameters on the performance of room-temperature gamma-ray detectors grown using the VGF method.

Conference Presentation

Citation Download Citation

Ritwik Nag, Sandeep K. Chaudhuri, and Krishna C. Mandal "Correlation of transport properties with charge trapping parameters in Cd_0.9Zn_0.1Te_1-xSe_x room temperature gamma-ray detectors", Proc. SPIE PC12696, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXV, PC1269604 (4 October 2023); https://doi.org/10.1117/12.2682618

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Crystals

Gamma radiation

Imaging spectroscopy

Spectroscopy

Compound semiconductors

Matrices

Selenium

Show All Keywords

Keywords/Phrases

Search In:

Publication Years