Presentation
9 March 2024 Low-pressure acidic ammonothermal (LPAAT) growth of large diameter nearly bowing-free GaN crystals
Shigefusa F. Chichibu, Kouhei Kurimoto, Quanxi Bao, Yutaka Mikawa, Makoto Saito, Daisuke Tomida, Tohru Ishiguro, Kohei K. Shima
Author Affiliations +
Abstract
In this presentation, seeded growths of large diameter GaN crystals using the low-pressure acidic ammonothermal (LPAAT) method operated at around 100 MPa will be demonstrated. Nearly bowing- and mosaic-free GaN crystals exhibiting the full-width at half-maximum values for the 0002 X-ray rocking curves below 20 arcsec were achieved on high lattice coherency c-plane AAT seeds with gross dislocation densities in the order of 104 cm−2. The photoluminescence spectra of the grown crystals exhibited a predominant near-band-edge emission at 295 K, of which intensity was one order of magnitude higher than the characteristic deep-state emission called "yellow luminescence band". A nearly bowing-free large diameter c-plane GaN crystal was eventually obtained.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigefusa F. Chichibu, Kouhei Kurimoto, Quanxi Bao, Yutaka Mikawa, Makoto Saito, Daisuke Tomida, Tohru Ishiguro, and Kohei K. Shima "Low-pressure acidic ammonothermal (LPAAT) growth of large diameter nearly bowing-free GaN crystals", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288601 (9 March 2024); https://doi.org/10.1117/12.3001028
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KEYWORDS
Gallium nitride

Crystals

Semiconducting wafers

Chip manufacturing

Electronic components

Gallium

Manufacturing

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