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9 March 2024 Development of efficient visible InGaN laser diodes employing polarization doped p-type layers
Piotr Perlin, Muhammed Aktas, Lucja Marona, Anna Kafar, Szymon Grzanka
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860Y (2024) https://doi.org/10.1117/12.3001112
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Nitride semiconductor-based light emitters (LEDs and laser diodes) are influenced by magnesium (Mg) acceptors, limiting conductivity and operational temperature due to high ionization energy. Mg also causes strong optical absorption, reducing laser diode efficiency. Dielectric polarization engineering using wurtzite nitride lattice symmetry (polarization doping) has been proposed to manipulate electrical properties. Our study demonstrates low threshold current density (2.5 kA/cm2), low internal losses (around 5 cm-1), and good thermal stability in fabricated laser diodes, enabling operation at cryogenic temperatures. Notably, polarization-doped p-layers yield lower voltage than Mg-doped ones. Understanding hole injection from polarization-doped layers remains a challenge.
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Piotr Perlin, Muhammed Aktas, Lucja Marona, Anna Kafar, and Szymon Grzanka "Development of efficient visible InGaN laser diodes employing polarization doped p-type layers", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860Y (9 March 2024); https://doi.org/10.1117/12.3001112
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KEYWORDS
Semiconductor lasers
Dielectric polarization
Indium gallium nitride
Magnesium
Light emitting diodes
Light absorption
P-type semiconductors
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