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10 April 2024 EUV double patterning solution for subtractive metal patterning at 18nm pitch
Christopher Penny, Koichi Motoyama, Hosadurga Shobha, Nabil Azad, Taesun Kim, Shravana Katakam, Johnsoo Kim, Joe Lee, Gideon Oyibo, Jaemyung Choi, Stuart Sieg, Tenko Yamashita, John Arnold, Kisik Choi
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Proceedings Volume PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII; (2024) https://doi.org/10.1117/12.3016092
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
In this work, we demonstrate a self-aligned litho-etch litho-etch (SALELE) process flow for 18nm pitch patterning of subtractive Ru structures. This process combines many individual steps from a standard damascene double patterning flow with a spacer pull process to adapt it for subtractive patterning. Requiring two EUV exposures, this process flow enables a broad design space comparable to existing SALELE solutions for damascene integrations. Utilizing this process flow, we have demonstrated successful patterning of complex designs including intertwined comb-serpentines and various mixed pitch patterns. We report matched resistance for both mandrel and non-mandrel resistors. Additionally, we demonstrate equivalent yields for 1mm long intertwined comb-serpentine structures with serpentines formed from both mandrel and non-mandrel patterns.
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Christopher Penny, Koichi Motoyama, Hosadurga Shobha, Nabil Azad, Taesun Kim, Shravana Katakam, Johnsoo Kim, Joe Lee, Gideon Oyibo, Jaemyung Choi, Stuart Sieg, Tenko Yamashita, John Arnold, and Kisik Choi "EUV double patterning solution for subtractive metal patterning at 18nm pitch", Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3016092
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KEYWORDS
Optical lithography
Extreme ultraviolet
Double patterning technology
Metals
Design and modelling
Copper
Extreme ultraviolet lithography
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