Deep-red/near infrared (NIR) persistent emission from purely organic molecules possesses great potential for security protocols, imaging, and information exchange. Persistent electroluminescence, achieved by incorporating suitable materials in organic light-emitting diodes (OLEDs), is highly attractive as it allows to integrate the essential features into optoelectronic systems and applications. While first material systems using triplet-singlet Förster resonance energy transfer (TS-FRET) show promising characteristics, the concentrations of phosphorescent donor materials and fluorescent deep-red acceptor materials remain too low for OLED applications. In our contribution, we present a systematic photophysical analysis of several donor-acceptor combinations based on TS-FRET with the aim of increasing the donor concentration while keeping high photoluminescence quantum yields. Our results pave the way towards efficient deep-red/NIR down-conversion OLED pixels with persistent emission.
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