Presentation
3 October 2024 On-chip GaN vacuum nanoelectronics
George T. Wang, Keshab R. Sapkota, A. Alec Talin, Francois Leonard, Gyorgy Vizkelethy
Author Affiliations +
Abstract
We present the fabrication and operation of GaN vacuum electron nanodiodes operating by field emission and in air. The devices exhibit low turn-on voltage, high field emission current, and excellent radiation hardness. Experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, temperature, and radiation environments are discussed. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be shown. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George T. Wang, Keshab R. Sapkota, A. Alec Talin, Francois Leonard, and Gyorgy Vizkelethy "On-chip GaN vacuum nanoelectronics", Proc. SPIE PC13114, Low-Dimensional Materials and Devices 2024, PC1311406 (3 October 2024); https://doi.org/10.1117/12.3029417
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KEYWORDS
Gallium nitride

Nanoelectronics

Vacuum

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