Fabrication of pn junction CdTe radiation detectors by thermal diffusion doping with electron beam

Junichi Nishizawa; Inaba Kagemitsu; Katsuyuki Takagi; Hiroki Kase; Toru Aoki

doi:10.1117/12.3027912

4 October 2024 Fabrication of pn junction CdTe radiation detectors by thermal diffusion doping with electron beam

Junichi Nishizawa, Inaba Kagemitsu, Katsuyuki Takagi, Hiroki Kase, Toru Aoki

Author Affiliations +

Proceedings Volume PC13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI; PC131510G (2024) https://doi.org/10.1117/12.3027912
Event: Optical Engineering + Applications, 2024, San Diego, California, United States

Conference Poster

Abstract

CdTe is used as a compound semiconductor detector that operates at room temperature. Because CdTe has a thick crystal of approximately 1mm, it is necessary to apply a high voltage to extract the charge generated by incident x-rays. Although it is necessary to suppress the leakage current that increases when a high voltage is applied, this leakage current can be suppressed by using the rectification effect of the diode. A pn junction is used as the diode, which has a potential barrier formed inside the crystal and is considered to have high heat resistance and mechanical resistance. Therefore, we propose a doping method using thermal diffusion using an electron beam. In order to verify thermal diffusion doping using an electron beam, we fabricated a pn-type CdTe radiation detector using an EBAS (Electron Beam Assist Source) device, which is an electron beam annealing device.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Junichi Nishizawa, Inaba Kagemitsu, Katsuyuki Takagi, Hiroki Kase, and Toru Aoki "Fabrication of pn junction CdTe radiation detectors by thermal diffusion doping with electron beam", Proc. SPIE PC13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI, PC131510G (4 October 2024); https://doi.org/10.1117/12.3027912

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