Effects of surface roughness and contact pressure on wafer bonding strength using transmission laser bonding technique

Ampere A. Tseng; Jong-Seung Park

doi:10.1117/1.2397088

1 October 2006 Effects of surface roughness and contact pressure on wafer bonding strength using transmission laser bonding technique

Ampere A. Tseng, Jong-Seung Park

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 5, Issue 4, 043013 (October 2006). https://doi.org/10.1117/1.2397088

Abstract

The reliability in the wafer bonding is highly dependent on the surface conditions present on each individual wafer. An emerging wafer bonding technique, referred to as transmission laser bonding (TLB), is examined and implemented for the bonding of Pyrex glass-to-silicon wafers using a solid-state pulsed neodymium: yttrium aluminum garnet (Nd:YAG) laser. Focusing specifically on the physical attributes of surface roughness and contact pressures, we explore their relative effects on the associated bond strength. The bonding strengths of the TLB bonded specimens are quantified using a microtensile tester, whereas the surface roughness and flatness are determined by atomic force microscopy and profilometry, respectively. The tensile results indicate that with appropriate surface roughness and contact pressure, the bond strength obtained is comparable with, if not better than, those using conventional wafer bonding techniques. Both the x-ray photoelectron spectroscopy and Auger electron spectroscopy are used to facilitate the study of the bonding mechanism of the delaminated surfaces of TLB specimens by evaluating the migration and diffusion of different atoms across the bonding interface. A thermal penetration analysis is also provided to validate the findings of the bond strength and the spectroscopic evaluations.

©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Ampere A. Tseng and Jong-Seung Park "Effects of surface roughness and contact pressure on wafer bonding strength using transmission laser bonding technique," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(4), 043013 (1 October 2006). https://doi.org/10.1117/1.2397088

Published: 1 October 2006

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