High-performance GaAs-based superluminescent diode with 292-nm emission bandwidth using simple dot-in-a-well structures

Mohammed Abdul Majid

doi:10.1117/1.JNP.12.026007

24 April 2018 High-performance GaAs-based superluminescent diode with 292-nm emission bandwidth using simple dot-in-a-well structures

Mohammed Abdul Majid

Author Affiliations +

Journal of Nanophotonics, Vol. 12, Issue 2, 026007 (April 2018). https://doi.org/10.1117/1.JNP.12.026007

Abstract

We report a simultaneous amplified emission from InAs-based self-assembled quantum dot and quantum well in a multistack dot-in-a-well superluminescent light-emitting diode (SLD) for application in broadband sources. A combination of atomic force microscopy, photoluminescence of the test structures, and optoelectronic characterization of SLD is used to obtain an emission bandwidth of ∼292 nm covering O–S communication band (including 850-nm band) and a maximum continuous power of ∼1.33 mW at room temperature.

Citation Download Citation

Mohammed Abdul Majid "High-performance GaAs-based superluminescent diode with 292-nm emission bandwidth using simple dot-in-a-well structures," Journal of Nanophotonics 12(2), 026007 (24 April 2018). https://doi.org/10.1117/1.JNP.12.026007

Received: 4 October 2017; Accepted: 3 April 2018; Published: 24 April 2018

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available