Electrical properties of p-type HgCdTe/ZnS interfaces

Henry X. Yuan; Fei Ming Tong; Dingyuan Tang

doi:10.1117/12.61042

1 March 1993 Electrical properties of p-type HgCdTe/ZnS interfaces

Henry X. Yuan, Fei Ming Tong, Dingyuan Tang

Author Affiliations +

Optical Engineering, Vol. 32, Issue 3, (March 1993). https://doi.org/10.1117/12.61042

Abstract

A study is made of p-type HgCdTe surface passivation with ZnS. Measurements of capacitance-voltage characteristics for metal insulator semiconductor (MIS) devices show that the interface electrical properties strongly depend on the surface preparation. Under some appropriate surface pretreatment, the fixed interface charge density can be lowered to near -1 x 10¹¹ cm^-2, and the slow trap density can be less than 1 x 10¹¹ cm^-2, but the interface trap density is still as high as 10¹² cm^-2 eV^-1. Experimental results are discussed.

Citation Download Citation

Henry X. Yuan, Fei Ming Tong, and Dingyuan Tang "Electrical properties of p-type HgCdTe/ZnS interfaces," Optical Engineering 32(3), (1 March 1993). https://doi.org/10.1117/12.61042

Published: 1 March 1993

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available