Silicon optical modulator with integrated grating couplers based on 0.18-μm complementary metal oxide semiconductor technology

Haihua Xu; Zhiyong Li; Yu Zhu; Yuntao Li; Yude Yu; Jinzhong Yu

doi:10.1117/1.3560264

1 April 2011 Silicon optical modulator with integrated grating couplers based on 0.18-μm complementary metal oxide semiconductor technology

Haihua Xu, Zhiyong Li, Yu Zhu, Yuntao Li, Yude Yu, Jinzhong Yu

Author Affiliations +

Optical Engineering, Vol. 50, Issue 4, 044001 (April 2011). https://doi.org/10.1117/1.3560264

Abstract

A silicon p-i-n diode Mach-Zehnder optical modulator integrated with grating couplers is fabricated in 0.18-μm complementary metal oxide semiconductor technology. The device has an ultracompact length of 200 μm. High modulation efficiency with a figure of merit of VπL = 0.22 V mm is demonstrated. A novel pre-emphasis technique is introduced to achieve high-speed modulation, and a data transmission rate of 3 Gbps is present.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Haihua Xu, Zhiyong Li, Yu Zhu, Yuntao Li, Yude Yu, and Jinzhong Yu "Silicon optical modulator with integrated grating couplers based on 0.18-μm complementary metal oxide semiconductor technology," Optical Engineering 50(4), 044001 (1 April 2011). https://doi.org/10.1117/1.3560264

Published: 1 April 2011

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