Ptychography as a wavefront sensor for high-numerical aperture extreme ultraviolet lithography: analysis and limitations

Priya Dwivedi; Silvania F. Pereira; H. Paul Urbach

doi:10.1117/1.OE.58.4.043102

9 April 2019 Ptychography as a wavefront sensor for high-numerical aperture extreme ultraviolet lithography: analysis and limitations

Priya Dwivedi, Silvania F. Pereira, H. Paul Urbach

Author Affiliations +

Funded by: Marie Curie Actions, European Union

Optical Engineering, Vol. 58, Issue 4, 043102 (April 2019). https://doi.org/10.1117/1.OE.58.4.043102

Abstract

Wavefront aberration measurements are required to test an extreme ultraviolet (EUV) imaging system. For a high-NA EUV imaging system, where conventional wavefront-sensing techniques show limitations, ptychography can be used for this purpose. However, at the wavelength region of EUV (i.e., 13.5 nm), the position accuracy of the scanning mask that is defined for ptychography is stringent. Therefore, we propose ptychography combined with mask position correction. The simulated intensity patterns, the ones we use, resemble expected EUV experimental data. Finally, we show the results in the presence of Poisson noise and the tolerance of the position correction method for error in mask positions.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Priya Dwivedi, Silvania F. Pereira, and H. Paul Urbach "Ptychography as a wavefront sensor for high-numerical aperture extreme ultraviolet lithography: analysis and limitations," Optical Engineering 58(4), 043102 (9 April 2019). https://doi.org/10.1117/1.OE.58.4.043102

Received: 27 November 2018; Accepted: 19 March 2019; Published: 9 April 2019

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KEYWORDS

Wavefronts

Extreme ultraviolet

Wavefront sensors

Diffraction

Extreme ultraviolet lithography

Photomasks

Imaging systems

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