We present an intensity-balanced dual-frequency laser (DFL) based on an Nd: GdVO₄ microchip crystal. The intensity balance ratio tuning mechanism of the DFL, which is governed by the heat sink temperature T_c of the laser crystal, is experimentally studied. The experimental results indicate that keeping a balanced intensity condition, when the pumping power of the DFL increases, the heat sink temperature T_c of the laser crystal must be lowered to rebalance the DFL signal intensities. The T_c versus pumping power slope is experimentally measured to be −17.95  °  C  /  W. By fixing the pumping power at 5.6 W, an intensity-balanced microchip DFL with output power up to 103 mW and frequency separation up to 61 GHz is achieved, whose slope efficiency is 9%.