Prof. Akihiro Ikeda Profile

Prof. Akihiro Ikeda

at Sojo Univ

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Proceedings Article | 4 March 2019 Presentation + Paper

Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance

T. Kikuchi, K. Imokawa, A. Ikeda, D. Nakamura, T. Asano, H. Ikenoue

Proceedings Volume 10905, 109050Z (2019) https://doi.org/10.1117/12.2509191

KEYWORDS: Silicon carbide, Doping, Resistance, Electrodes, Crystals, Laser irradiation, Argon, Excimer lasers, Oxidation, Nitrogen

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We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiN_x film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (~1 × 10²¹/cm³ at the surface) was achieved by laser ablation of the SiN_x film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10^-5 Ω･cm² was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (~1 × 10²¹/cm³ at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10^-4 Ω･cm² was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.

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