Porous OSG low-k dielectrics deposited by using TEOS and MTEOS mixture with different ratios and Brij® 30 surfactant. The deposited samples contain a different concentration of terminal methyl groups that is proportional to MTEOS concentration. An increase in the methyl groups concentration by changing TEOS/MTEOS ratio decreases the open porosity, k-value, and Young’s modulus and increases the mean pore radius although the template concentration was kept constant. Plasma damage by fluorine radicals depends on the carbon concentration in the films. It can be reduced by 60% when the carbon concentration in the film exceeds 10 atomic percent as measured by XPS (the films deposited with TEOS/MTEOS ratio 40/60).
Low temperature etching of organosilicate low-k dielectrics in CF3Br and CF4 plasmas is studied. Chemical composition if pristine film and etched were measured by FTIR. Decrease in plasma-induced damage under low-temperature conditions is observed. It is shown that the plasma damage reduction is related to accumulation of reaction products. The reaction products could be removed by thermal bake. In the case of CF4 plasma, the thickness of CFx polymer increases with the temperature reduction. This polymer layer leads to strong decrease of diffusion rate of fluorine atoms and as a consequence to reduction of plasma-induced damage (PID). Bromine containing reaction products are less efficient for low-k surface protection against the plasma damage.
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