A high sensitivity speckle based fiber-optic method for registration of low intensity IR radiation is proposed.
The method is based on the effect of variation of the speckle pattern in the far-field of a multimode fiber. IR radiation
that falls on a lateral surface of the fiber leads to variation of the speckle image. Computer processing of the speckle
image provides information on the amplitude of the perturbation that hits the fiber. An algorithm has been developed for
processing of the speckle image and determining of the intensity of IR radiation. The results of computer simulation
correlate sufficiently well with experimental ones.
Vibrational and structural properties of GexSb40 xS60 (x = 25, 27, 35) chalcogeide glasses are studied in unmodified and γ-radiation-modified states by using infrared spectroscopy, high-energy synchrotron x-ray diffraction and extended x-ray
absorption fine structure spectroscopy. An agreement between radiation-induced structural changes and vibrational
properties measured is established. It is suggested that the atomic pairs with wrong coordination created in the
framework of coordination topological defect formation concept play a key role in the formation of radiation-modified
state of the investigated glasses. Advantages and disadvantages of post-technological radiation-modification of
chalcogenide glasses are considered within configuration coordinate model for description of unmodified and radiationmodified
states.
New composite and nanocomposite materials consisting from amorphous chalcogenide (As2S3, As2Se3) and polymers
such as polyvinylalcool (PVA) and polyvinylpyrrolidone (PVP) were prepared by inexpensive and easy coating
technique from chemical solution and were investigated. Composite retains many properties of the initial components
from which they are prepared. Morphology and optical properties of deposited materials in the form of films are
presented. The decreasing of the As2S3 component in the composite leads to the shift of the absorption edge to higher
energies and spheroid dimensions are decreased. For the samples As2S3:Pr3+/PVA an increasing of transparency in the
visible region with respect to pure As2S3 was observed. As a result of ultraviolet light irradiation of the composites
change of optical properties is observed. For example the refractive index may be change in value 0,1. This allows
utilizing these structures for holographic recording of diffraction gratings. The investigated new composites are
perspective for different photonic devices as well as for recording media with high resolution.
The visible luminescence from Pr3+, Dy3+, Nd3+, Sm3+ and codoped with Ho3+ and Dy3+ ions embedded in
Ga0.017Ge0.25As0.083S0.65 glass hosts at room temperature and at T=10 K is reported, when pumping with an Ar+-ion laser
at λ=488 nm. Fluorescence emissions at 1.3 μm was observed for Dy3+ and both at 1.3 and at 1.5 μm for Pr3+ doped glasses with wavelength pumping at 950 nm. Energy transfer from Ho3+:5F3 level to Dy3+:4F9/2 level increase the visible emission efficiency at 650 nm in the codoped glasses. The investigated Ga0.017Ge0.25As0.083S0.65 glasses doped with Pr3+ are promising amplifier materials for 1.3 and 1.5 μm fiber optic telecommunication windows.
The visible luminescence from Pr3+, Dy3+, Nd3+, Sm3+ and co-doped with Ho3+ and Dy3+ ions embedded in
Ga0.017Ge0.25As0.083S0.65 glass hosts at room temperature and at T10 K is reported, when pumping with an Ar+-ion laser
at lambda=488 nm. Fluorescence emissions at 1 .3 &mgr; was observed for Dy3+ and both at 1.3 and at 1.5 &mgr; for Pr3+ doped glasses with wavelength pumping at 950 nm. The emission bands correlate with the absorption bands characteristic for
the electronic transitions of the rare-earth ions. Energy transfer from Ho3+: 5F3 level to Dy3+:4F9/2 level increase the
visible emission efficiency at 650 nm in the co-doped glasses. The emission spectra correlate with the absorption
spectra of the investigated glasses. The investigated Ga0.017Ge0.25As0.083S0.65 glasses doped with Pr3+ are promising
materials for optical fibers amplifiers operating at 1300 and 1500 nm telecommunication windows. The effect of
oxygen on the absorption and luminescence spectra of Pr3+-doped Ga-La-S-O (GLS) glasses with a constant cationic
ratio Ga/La=O.7/O.3 and varying both oxygen (0.65 and 2.95 wt %) and praseodymium (0. 1 and 1 .0 wt %) content also
are presented.
Chalcogenide glasses doped with various rare-earth ions are extensively studied as potential materials for fiber optic amplifiers operating at 1.3 and 1.5 μm telecommunication windows. The experimental results on optical absorption and photoluminescence of arsenic sulfide glasses and optical fibers doped with rare-earth elements (Pr3+, Sm3+, Er3+ and Dy3+) are presented. Near the absorption edge the rare-earth impurities affect strongly the slope and the magnitude of the week absorption tail. Fluorescence spectra of bulk samples and optical fibers of arsenic sulfide doped with different concentrations of Pr3+ and Dy3+ indicate on the presence of luminescent band located around 1.3 and 1.5 μm. These bands correspond to the electron transitions from the discrete levels (6F7/2&rarr:6H13/2 and 6F5/2→6H11/2 for Dy3+ and 1G4/1&rarr3H6 and 3F3→3H4 for Pr3+, respectively), and which confirmed the presence of trivalent rare-earth ions in the glass matrix. The observed effects of rare-earth dopants on the As2S3 glass are discussed in connection with the expected behavior of the impurities in the glass.
The bi-quanta interaction between the bi-modal cavity electromagnetic field and atomic string consisting of undistinguishable pair of two-level atoms relatively dipole forbidden transition, is studied. The trapping conditions for the flying time of the atoms in cavity are obtained. Moreover, we received the so called cotangent state for the proposed system. The properties of the electromagnetic field for such state are examined. Analyzing the obtained numerical results we concluded that this state exhibits non-classical properties: such as sub-Poissonian statistics, squeezing, or more interestingly, vacuum nutation.
The experimental investigation of a novel technical approach for formation of security diffraction structures with high degree of protection based on a combined optical and electron-beam lithography techniques are presented.
Electron-beam and holographic recording of diffraction gratings was processed in the layers of poly-N-poxypropylcarbazole (PEPC) and co-polymers of carbazolylalkylmethacrylate with octylmethacrylate (CAM:OMA) containing additions of CHI3. The dependence of the diffraction efficiency of planar gratings on the recording current was studied. The influence of post-effect and storage in the dark on the diffraction efficiency is considered. By chemical development technique the reflecting relief diffraction gratings are obtained with the diffraction efficiency of 25-30%.
Recently special attention has been given to the problem of the holographic registration of images and information with the purpose of a solution of various scientific and technical problems. It is well known that carbazol containing polymers, for example, poli-N-carbazolylalcoxymethacrylate (poli-CAM), co-polymers CAM, polyepoxypropilcarbazol (PEPC), have been recommended very well as organic photoconductors, especially in the field of the creation of mediums for information registration, including holograms. The photochemical method of image recording of carbazole-containing polymers films attribute to famous methods of image recording. Our research is aimed at finding of a new photopolymer compositions sensitive in the visible and infrared spectra. We have studied a photopolymer materials, which are doped by amorphous semiconductors. We have used As2S3, S, Se, GeSe as additives of the amorphous semiconductor, and PEPC, PVA, BMA as main polymers. These photopolymer films have been prepared by pouring from solutions. The photopolymer films have been applied both on transparent (polyethylenethereftalat) films and rigid substrates of optical glass. The samples have been obtained with the thickness in the range of 2 μm to 30 μm. The contents of different amorphous semiconductors have beem maintained within the limit of 5 - 40 wt.% of the photopolymer. The variation of the concentration of each component and the transmission spectra have been studied for all the photopolymer films. The experimental measurements of its transmission spectra are evaluated in conjunction with its application for optical holographic recording in visible and infrared ranges. The optical transmission spectra have been measured in optical region from 0.8 μm to 3.0 μm by spectrum-photometer SPECORD 61 NIR and in region from 0.4 μm to 0.8 μm by spectrum-photometer SPECORD UV VIS.
The effect of rare earth and transition metal luminescent impurities on the optical properties of As2S3 glass is studied in a wide spectral region. The Raman, IR, band- to-band and edge absorption spectroscopies are employed to obtain information about the incorporation of impurity ions in the host glass structure and the corresponding changes in intrinsic optical characteristics. The effects of light- soaking and thermal treatment on the doped As2S3 glasses were examined as well. In the fundamental absorption region a reflectivity maximum at 2.98 eV shows blue or red shift depending on the electro negativity of the impurity, in accordance with the corresponding variations of the glass structure. Near the edge absorption the impurity affects strongly the slope and the magnitude of the weak absorption tail. The observed effects of metal dopants on the As2S3 glass are discussed in connection with the expected behavior oft he impurities in the glass.
Cross-linking and structurable polymer photosensitive materials have been studied for many years and they are widely used for optical recording of information. After the investigation of the photo-chemical and photo-physical processes in various systems, it appears that the chemical structure of the polymer matrix plays an essential role in the process of reaction that takes place upon irradiation by a laser beam. The results of experiments that were conducted to investigate the modification of the absorption with the time of exposure, modification of the degree of photo- structuring with time, the dependence of the photosensitivity of thickness and other characteristics are presented in this paper. Some of the applications of the results concerning the hardening of the cross-linking polymers with the scope to improve the mechanical properties of the surface relief image (hardness, strength, adhesive stability) and the possibilities to make copies by the hot stamping method are also presented.
The effect of low amounts of dysprosium, samarium and manganese (0.1-0.5 at.%) on structure and optical properties of chalcogenide glassy semiconductors As2S3 and As2Se3 is investigated. The fundamental absorption edge shifts to longer wavelength with doping; the largest shift was observed for As2S3 glasses doped with Dy and Mn. A correlation of the properties with medium range order and electronegativity of impurity atoms was revealed. Photodarkening relaxation under light exposure of a-As2Se3 amorphous films doped with 0.5 at.% of metals Sn, Mn, Sm and Dy was studied in dependence on the impurity and thermal treating. Both factors reduce photodarkening and the degree of reduction depends on the sort of impurity. The relaxation process may be described by a stretched exponential with the dispersive parameter 0.5
Experimental data of mass spectrometric analysis of vitreous As2(S, Se)3 chalcogenide glasses shows the perceptible difference in the values of Asm(S, Se)n ion currents before and after laser illumination. Data of the computational calculation of the stableness of molecular units are in good correlation with obtained experimental mass spectrometric data. After laser illumination we detect new kinds of molecular units as Asm, Sn, and Sen. The observed changes of the ion currents in the mass spectrum may be explained in view of some re-arrangement in the shot-range order of the component atoms under illumination. We propose for discussion the results of computational modeling of molecular units such as Asm(S,Se)n observed experimentally in the As2(S,Se)3Sn0.1 alloys by their mass spectrometric analysis before and after laser illumination. In this report we suppose that a study of the composition of condensed molecules by the intermediacy of mass spectrometry and HyperChem Computational Chemistry Program may harvest complementary information useful in orders to building structural models of chalcogenide glasses. In reslut of this work we also conclude that tin atoms in the As2(S,Se)3Sn0.1 network are bonded in two modes: before illumination as 2(S,Se) equals Sn equals 2(S,Se)-type and after illumination as (S,Se)-Sn-(S,Se)-type.
In this communication we present the results of computational modeling of molecular units as AsmSn registered by mass spectrometry in the As2S3:Snx glasses before and after laser illumination. Using HyperChem Computational Chemistry program we obtained 3D structures, with global minimum energy conformation for following molecules: As4 (3.47); S8 (4.44); As4S3 (11.87); As2S5 (14.36); As2S4 (17.62); As2S6 (19.11); As4S4 (21.88); As4S5 (24.98); As2S3 (25.81); As4S6 (43.13). The model of the As2S3:Sn0.1 glasses, using 200 As atoms, 300 S atoms and 10 Sn atoms for computational modeling, is presented too. Such model shows that a tin atom may be bonded in two ways: when the tin atoms are common for two rings with 12 atoms and when the tin atom are bonded between the layer of the glassy network. When the tin atom are insert in the network rings for 12 atoms the structural model shows the more compact packing of the atoms.
The Me-Amorphous chalcogenide semiconductor (AChS)--dielectric- semiconductor (Me - As2Se3: Sn - SiO2 - Si) (MChDS) structure was obtained. There have been found that under the lighting in electric field the MChDS in dependence from applied external direction of electric field positive or negative are charged. There were found that quantity of accumulated charge from light intensity have been depended linear type Q equals Qmax ((alpha) + (beta) D), where D--is the dose of radiation (D equals I t, where I is the intensity and t duration of radiation). There were studied and developed three different type of signal recording: by measuring of the photoempf, displacement photocurrent and accumulated charge, which allow to propose two type of sensors of radiation. The dose measuring and the image writing and readout processes in the real time and accumulation of the small signals regimes. The space functional separation of the recording and readout allows to carry out understroing repetition readout of the image and other operations.
The interaction of radiation with vitreous materials provokes irreversible and reversible changes of atomic and electronic structures. These changes in their turn manifest themselves in the experiment through changes of mechanical, thermal, optical, photoelectrical and other characteristics. Under the radiation influence the structure of vitreous materials changes, new defects appears, film crystallization or amorphization takes place, phase transition or transition from one unstable state to another. It is evident that such changes radically influence the optical and photoelectrical properties of the material: the refraction index and other optical material constants change; reflection and absorption of light as well as photoelectric parameters. Of no less importance is the appearance of new possibilities for application of vitreous materials as optical and photoelectrical recording media, fibers and planar waveguides, active and passive elements of optoelectronics, including nonlinear elements and sensors of different physical quantities. This paper covers a survey of works dedicated to the research of various photoinduced phenomena in bulk, thin-film and fiber samples of chalcogenide glassy semiconductors.
Reflectivity spectra of CuAlS2, CuAlSe2 and CuGaSe2 crystals have been investigated in the wave number range 50 - 4000 cm-1 for the polarization Εllc and Ε⊥c. The fundamental phonon parameters, the limiting dielectric constants εo and ε∞ and the reflectivity spectra contours have been calculating by using classical dispersion relations for both Εllc and Ε⊥c configurations. The Szigeti effective charges and the relative ion charges of Cu, Ga, Al, S, Se anions and cations have been calculated in dependence on the incident light polarization.
Raman scattering of CuAlSe2 (at resonance excitment), CuAlS2 and CuAlxGa1-xSe2 has been investigated at 300 and 77K. The modes caused by Al - Se and Ga - Se vibrations have been determined for CuAlxGa1-xSe2 solid solutions. We have found that the intensity of the modes B12(Γ3) - 107.2 and 210.5 cm-1 increases whereas the intensity of Ε(Γ5) - 157.3 cm-1 mode decreases as the exciting energy approaches the band gap Εg.
The non-monotonous kinetics of "photobleaching" effect in chalcogenide glass fibers, induced by sub-gap light at 77 K was studied The mechanism, a system of rate equations and computer simulation results are presented.
A modified configuration of fiber optic displacement sensor, based on detection of clad modes is described. For clad modes detection the end segment of the fiber is bent and placed in an integrating sphere. Experimental set-up and transmission characteristics are presented.
The A62Se3 - Si02 - Si structure with A62Ses for writing a.nd Si for readout :h.a.s been suggested ior Xra. y im.a.ge a.pplica.tion. In this structure th.e recording ha.ve been. ca.:rri.ed out under sim:ulta.n.eous projectioit oi a.n X-ray pa.ttern on the top semitransparent contact a.nd a.pplica.tion of the external volta.ge, but the erasing - under illumin.a.tion. of light from the ra.n.ge of th.e .4s2S es funda.men.tal a.bsorption. a.n.d a.pplica.tion. of th.e opposite pola.rity external voltage. Th.e cha.."ging kinetics was revealed to be described by exponential la.w with. saturation.. It was found th.at th.e charge is a.ccumu.la.ted at th.e deep tra.ps disposed a.t th.e As2Se3- Si02 interface. Th.is structure ma.ke it possible to work m the integration small signa.i regime but the space separation. of recording and read.out layers provides un.destromg repetition.al readout of image. It was established th.at th.e da.rk rela.xa.tion of a.ccumula.ted cha.rge ta.kes place due to th.e.rmo-:iield emission of holes from t:ra.ps according to Pool-Frenkel la.w.
Keywords: solid state detector, image device structure, X-ray, area meter, amorph.ous semiconductor
Experimental and theoretical results are presented for the kinetics of photoinduced absorption in chalcogenide glass fibers. Photoinduced absorption measurements were carried out both at room temperature as well as at liquid nitrogen temperature in a wide range of probing light photon energy hw < Eg. Experimental results are interpreted on the bases of the model with quasicontinuous distribution of localized states in the gap. Both experimental and theoretical results show that subbandgap light can not only reduced the previously induced absorption but can produce an enhancement of photoinduced absorption also. It is shown, that photoinduced absorption data can be used for determining the parameters of localized states distribution. Computer simulation of photoinduced absorption kinetics shows a good correlation with experimental results.
Investigation results of the nonlinear interaction of short laser pulses with chalcogenide glasses are briefly described. The most characteristic peculiarities of the investigated nonlinear light transmission are discussed. A physical model, taking into account the light interaction with nonequilibrium phonons, is considered for the explanation of the experimental results. The results of the numerical calculations of the phenomenological equations are compared with the experimental data.
This paper describes a microbend displacement sensor with high sensitivity and wide dynamic range designed on the bases of multimode sensor-oriented fiber. A number of high sensitive sensors have been designed on the basis of microbending induced mode coupling of core to clad modes. Usually these sensors need very accurate alignment of input end face with light source for selective mode excitation. We propose a modified sensor configuration based on microbending induced mode coupling.
The Me-Chalcogenide glassy semiconductor-dielectric-semiconductor (Me-As2S3- SiO2-Si) structure was formed and the writing and readout processes of the optical image with high resolution were studied. The structures make the positive and negative images possible. The device works in both accumulation of the small signals and real time. The space functional separation of the recording and readout allows us to carry out repetition readout of the image and other operations.
Dynamics of optical nonlinearity are investigated experimentally in different time scales, from microsecond to nano-, pico-, and femtosecond domains. In addition Z-Scan measurements carried out the competition between permanent photodarkening and electronic nonlinearities in photoinduced absorption and refraction.
Nonlinear properties of chacolgenide glass A52S3 thin films have been measured with a self-diffraction (Z-Scan) technique. Photostructural changes and dynamical effects have been measured.
The peculiarities of the light transmission nonlinear charge were studied in the case of interband excitation of the chalcogenide glass thin films by nanosecond and picosecond light pulses. The transmission optical hysteresis due to photoinduced absorption is registered. The nonlinear behavior of the thin chalcogenide plates acting as a Fabry-Perot cavity is investigated in picosecond time scale. The possible explanation of the revealed nonlinearities is proposed.
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