We report our development of Indium tin oxide (ITO) films with thicknesses greater than the typical optical telecommunication wavelength bands (~1550 nm) having epsilon-near-zero (ENZ) property at 1550 nm wavelength for the purpose of providing a new ENZ material platform for building high-contrast metastructure and metasurface devices. The films were grown using a high-power impulse magnetron sputtering (HiPIMS) tool, which allows for more control over film growth. A post-growth thermal annealing allowed the ITO film to reach the ENZ condition at the desirable wavelength. Our goal is to understand how deposition parameters and post deposition annealing conditions affect the film’s optical properties, therefore obtaining a controllable fabrication process for a desired optical property. Using spectroscopic ellipsometry to characterize the films, we show that the thick ITO films grown with HiPIMS exhibit ENZ behavior after post deposition annealing. The regime in which the material exhibits ENZ behavior is shown to be tunable within the wavelength range of 1500-1650 nm by varying the anneal temperature, anneal time, and oxygen exposure during anneal. In comparison with other thick ITO films grown with conventional pulsed DC magnetron sputtering, the optical constants of HiPIMS ITO films are shown to be much more constant with less variation throughout the bulk of the film. This result shows that these ITO films can be used to design a new family of opto-electronic devices that use ENZ ITO as the low-index base for high-contrast metasurface devices and as cladding for waveguides or optical cavities.
We report our in-house R&D efforts of designing and developing key integrated photonic devices and technologies for a chip-scale optical oscillator and/or clock. This would provide precision sources to RF-photonic systems. It could also be the basic building block for a photonic technology to provide positioning, navigation, and timing as well as 5G networks. Recently, optical frequency comb (OFC)-based timing systems have been demonstrated for ultra-precision time transfer. Our goal is to develop a semiconductor-based, integrated photonic chip to reduce the size, weight, and power consumption, and cost of these systems. Our approach is to use a self-referenced interferometric locking circuit to provide short-term stabilization to a micro-resonator-based OFC. For long-term stabilization, we use an epsilon-near-zero (ENZ) metamaterial to design an environment-insensitive cavity/resonator, thereby enabling a chip-scale optical long-holdover clock.
Indium Tin Oxide (ITO) has shown significant potential in becoming a candidate for ε-near-zero (ENZ) metamaterial which can be a host material for EMNZ devices. However, the ENZ ITO material itself has not been thoroughly studied at a device level for several reasons. So far, only relatively thin (hundred nm scale) annealed ITO film has been studied for ENZ purposes. We put an initial effort in characterizing the 2 µm-thick ITO film in respect to its permittivity (ε). The melting point for indium is between 350 C and 400 C, so the annealing temperature falls into this window. A series of 2 µm-thick ITO films were deposited on a 3 µm-thick SiO2 on Si wafer that were annealed at different temperatures and times. These sample were further investigated by a cutting-edge ellipsometry technology. The optical constant depth profile at 1550 nm is measured for various annealing temperature and periods. The results show that both real and imaginary part of permittivity are non-uniform along the growth direction. Under a specific processing window, we are able to achieve a micron-scale of epsilon near-zero ITO film. We also conducted a TEM study to investigate the physical structure of the material. We find the evidence of different partial crystallization across the entire ITO film. The cross-section TEM with low magnification to show entire depth profile of the ITO from the SiO2 interface to the top surface. TEM images show evidence for the different crystal morphology across the ITO film, as the crystal grains varies for different regions of ITO.
Targeted, sequential deposition of metals using localized surface plasmon resonance (LSPR) is a promising fabrication route for solar fuel catalysts and sensors. This work examines liquid-phase, reductive photodeposition of platinum (Pt) nanoparticles onto the longitudinal ends of gold nanorods (AuNR) under surface plasmon excitation. Reductive Pt nucleation is initiated by plasmonic hot electrons at the Au-liquid interface, whose sites are governed by the plasmon polarity. In this work, in situ spectroscopic monitoring of the photodeposition process permitted real-time feedback into AuNR surface functionalization with the Pt precursor, Pt growth kinetics under monochromatic AuNR LSPR excitation, and their evolving light-matter interactions. Energy dispersive spectroscopy (EDS) mappings show Pt deposition was localized toward the AuNR ends. Coordinated X-ray photoelectron spectroscopy (XPS) measurements with density functional theory (DFT) calculations of the Pt-decorated AuNR density of states (DOS) elucidated optoelectronic behavior. Catalytic photodeposition using plasmonic hot electrons provide an economical path towards targeted, hierarchal assembly of multi-metallic nanoarchitectures at ambient conditions with specified optoelectronic activity.
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