Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating
c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up
to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the
temperature dependent hole concentration. The observed EA in Mg-doped In0.35Ga0.65N alloys was about 43 meV,
which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm
(with a hole concentration ~5 1018 cm-3 and hole mobility ~3 cm2/Vs) was obtained in Mg-doped In0.22Ga0.78N. It
was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases
exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with
those obtained from Hall-effect measurements.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.