Continuous-wave (cw) operation of integrated nanoscale lasers is a key ingredient for on-chip optical processing schemes in Si photonic circuits. Here, we demonstrate cw-lasing from individual InAs nanowires at mid-infrared wavelengths (2.4-2.7 µm) without any external cavity for mode confinement. Using finite difference time domain (FDTD) modelling of the threshold gain, optimal single Fabry-Perot nanowire laser geometries with diameter > 800 nm and lengths of 10-30 µm are realized by site-selective growth methods. Corresponding nanowires exhibit cw-lasing with thresholds around 10-30 kW/cm2 at lasing emission up to 70K.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.