In this paper, we show via transient thermal analysis that the use of ultra-high-frequency high-power fiber lasers as implemented in the spot-beam annealing method makes it possible to (1) flexibly induce and mimic the overall annealing conditions that were accomplished previously using various other types of lasers, and (2) engineer and leverage the periodic and highly transient thermal spikes that arise due to the individual laser pulses. We point out and discuss how such annealing characteristics may be well-suited for optimally inducing structural/topological relaxation and compositional short-range ordering of amorphous thin films, as for instance are presumably involved in annealing of amorphous IGZO films on high-temperature-processing-intolerant glass/plastic substrates for fabricating stable oxide TFTs for AMOLED displays.
In this paper, we report on the findings that pertain to evaluating the immediate viability of an UV-fiber-laserbased Si crystallization method referred to as spot-beam annealing (SBA). The SBA method leverages ultra-high frequency/low-energy pulses in order to flexibly create optimal conditions for executing various crystallization and annealing techniques for display and semiconductor applications. Specifically, we present recent experimental results that were obtained using a newly constructed SBA system that definitively show that SBA is capable of providing a highly ordered polycrystalline material, which is equivalent to the material generated using stateof-the-art ELA manufacturing systems. We discuss the implication of the results on the effectiveness of the polygon-scanner-based beam delivery schemes, and additional future variations and applications of the SBA method.
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