ZnSe and phosphorus doped ZnSe have been grown by Physical Vapour Transport (PVT) and Chemical Vapour Transport (CVT). In chemical vapour transport iodine is used as the transport agent where as in the physical vapour transport no transport agent is used. The largest crystal measures a size of 9 x 5 x 5 mm3. The Hall mobility is measured at room temperature and found to be 510 (cm2 / V.Sec) for pure ZnSe and 340 (cm2 / V.Sec) for doped ZnSe. The variance of mobility with temperature is also measured. The results are compared with the existing data and the advantages of this procedure over the existing experiments are discussed.
Tin Sulphide (SnS), a layered semiconducting material which finds wide applications in optoelectronic devices and window material for heterojunction solar cell. This paper reports on the material properties of thin films of SnS prepared by electrodeposition and brush plating. Brush plating is an electroplating process usually adopted to coat large area thin metal or alloy film. The films of 0.6-1.0 μm and 1.0-2.5 μm thickness were prepared by electrodeposition and brush plating respectively. X-ray diffraction studies showed that the as prepared films of both techniques revealed polycrystalline nature of the films and the lattice parameter values are: a=0.403 nm; b=1.145 nm; and c=0.399 nm. The surfaces were analyzed by electron spectroscopy for chemical analysis and SEM for surface morphology. The band gap, refractive index and extinction coefficient values were estimated from the optical studied in the wavelength region of 400-1500 nm. The adhesion of the films prepared by brush plating was found to be excellent. Photoelectrochemical solar cells were fabricated using SnS photoelectrodes. Capacitance-voltage studies revealed the p- type nature of all the films. The flat band potentials were 0.52 V and 0.47 V respectively. The quality of the films prepared by electrodeposition and brush plating are compared.
Molybdenum dichalcogenides are semiconductors, which can act as efficient electrode in the realization of photoelectrochemical solar cells. Layered semiconductors may also be of considerable interest for other than photovoltaic applications like high temperature, high vacuum lubricants, substrates for Langmuir-Blodgett films or large molecules (DNA, RNA etc.,) as a suitable for glass or graphite. Among molybdenum dichalcogenides (S2, Se2 and Te2), MoSe2 has led to the best solid state cells with efficiencies exceeding 6%. The main advantage of these MoSe2 semiconductor is the prevention of electrolyte corrosion, because of the phototransitions involve non- bonding d-d orbital of the Mo atoms.
Solar control coatings used in architectural glazings of buildings in warm climates should exhibit controlled optical transmittance (10 to 50%) in visible region and must reflect efficiently (>= 90%) in IR region to create a cool interior buildings. CuInS2 coatings deposited by the electron beam evaporation technique are found to satisfy basic requirements of SCC and appear superior to the metallic solar control coatings and PbS coatings.
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