Prof. Can Bayram Profile

Prof. Can Bayram

Associate Professor & Intel Alumni Endowed Faculty at Univ of Illinois at Urbana-Champaign

SPIE Involvement:

Author | Editor

Area of Expertise:

Photonics , III-V Semiconductors , Microelectronics , Heterointegration

Websites:

Personal Website | Company Website

Publications (23)

Proceedings Article | 5 March 2021 Poster + Presentation + Paper

Electronic surface and heterostructure: band offsets in ternary wurtzite and zincblende III-nitrides

Yi-Chia Tsai, Can Bayram

Proceedings Volume 11686, 116862C (2021) https://doi.org/10.1117/12.2576374

KEYWORDS: Heterojunctions, Quantum wells

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Proceedings Article | 5 March 2021 Presentation + Paper

First-principles calculations of N- and P-type doping in wurtzite and zincblende GaN

Yi-Chia Tsai, Can Bayram

Proceedings Volume 11687, 116870X (2021) https://doi.org/10.1117/12.2585115

KEYWORDS: Doping, Gallium nitride, Ionization, Germanium, Silicon, Beryllium, Thermodynamics, Silicon carbide, Magnesium, Carbon

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Proceedings Article | 1 March 2019 Paper

Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111)

Richard Liu, Callan McCormick, Can Bayram

Proceedings Volume 10918, 1091822 (2019) https://doi.org/10.1117/12.2506426

KEYWORDS: Silicon, Gallium nitride, Indium gallium nitride, Light emitting diodes, Raman spectroscopy, Sapphire, Quantum wells, Indium gallium aluminum nitride

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Proceedings Article | 26 January 2018 Presentation + Paper

Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology

C. Bayram, R. Grady, K. Park

Proceedings Volume 10540, 105401G (2018) https://doi.org/10.1117/12.2286738

KEYWORDS: Gallium nitride, Field effect transistors, Transistors, Aluminum, Logic, Silicon, Oscillators, Doping, Polarization, Electronics

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Proceedings Article | 16 February 2017 Presentation + Paper

InGaN-based flexible light emitting diodes

C. Bayram

Proceedings Volume 10104, 101041Y (2017) https://doi.org/10.1117/12.2251618

KEYWORDS: Light emitting diodes, Gallium nitride, Semiconductors, LED lighting, Thin films, Laser liftoff, Chemical lasers, Silicon carbide, Light sources and illumination, Silicon

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Proceedings Article | 27 January 2017 Presentation + Paper

Polarization-free integrated gallium-nitride photonics

C. Bayram, R. Liu

Proceedings Volume 10111, 101110Y (2017) https://doi.org/10.1117/12.2251607

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Photonics, Diffraction, Crystals, Indium, Green light emitting diodes, Light sources and illumination, Indium gallium nitride

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Proceedings Article | 13 March 2015 Paper

Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

C. Bayram, J. Kim, C.-W. Cheng, J. Ott, K. Reuter, S. Bedell, D. Sadana, H. Park, C. Dimitrakopoulos

Proceedings Volume 9364, 93641C (2015) https://doi.org/10.1117/12.2082897

KEYWORDS: Light emitting diodes, Gallium nitride, Graphene, Silicon carbide, Blue light emitting diodes, Visible radiation, Solid state lighting, Laser liftoff, Semiconductors, Chemical lasers

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Proceedings Article | 8 February 2015 Paper

Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)

C. Bayram, J. Ott, K. Shiu, C. Cheng, Y. Zhu, J. Kim, D. Sadana, M. Razeghi

Proceedings Volume 9370, 93702F (2015) https://doi.org/10.1117/12.2082894

KEYWORDS: Gallium nitride, Silicon, Ultraviolet radiation, Light emitting diodes, Visible radiation, Luminescence, Crystals, Semiconductor lasers, Light sources and illumination, Polarization

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Proceedings Article | 4 June 2014 Paper

Advanced flexible electronics: challenges and opportunities

Stephen Bedell, Davood Shahrjerdi, Keith Fogel, Paul Lauro, Can Bayram, Bahman Hekmatshoar, Ning Li, John Ott, Devendra Sadana

Proceedings Volume 9083, 90831G (2014) https://doi.org/10.1117/12.2051716

KEYWORDS: Nickel, Silicon, Gallium nitride, Flexible circuits, Semiconducting wafers, Germanium, Image processing, Photovoltaics, Sapphire, Solid state lighting

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Proceedings Article | 18 March 2013 Paper

Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

C. Bayram, K. T. Shiu, Y. Zhu, C. W. Cheng, D. Sadana, F. H. Teherani, D. Rogers, V. Sandana, P. Bove, Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, M. Razeghi

Proceedings Volume 8626, 86260L (2013) https://doi.org/10.1117/12.2009999

KEYWORDS: Gallium nitride, Silicon, Zinc oxide, Light emitting diodes, Indium gallium nitride, Crystals, Photovoltaics, Sapphire, Indium, Metalorganic chemical vapor deposition

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Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.

Proceedings Article | 4 February 2013 Paper

Gallium nitride on silicon for consumer and scalable photonics

C. Bayram, K. T. Shiu, Y. Zhu, C. W. Cheng, D. Sadana, Z. Vashaei, E. Cicek, R. McClintock, M. Razeghi

Proceedings Volume 8631, 863112 (2013) https://doi.org/10.1117/12.2008788

KEYWORDS: Gallium nitride, Silicon, Metalorganic chemical vapor deposition, Oxides, Epitaxy, Scanning electron microscopy, Silica, Crystals, Photonics, Aluminum nitride

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Proceedings Article | 21 January 2012 Paper

Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance

C. Bayram, D. Sadana, Z. Vashaei, M. Razeghi

Proceedings Volume 8268, 826827 (2012) https://doi.org/10.1117/12.913740

KEYWORDS: Gallium nitride, Resistance, Terahertz radiation, Diodes, Aluminum, Reliability, Oscillators, Electronic components, Optoelectronic devices, Polarization

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Proceedings Article | 24 January 2011 Paper

Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes

Z. Vashaei, C. Bayram, R. McClintock, M. Razeghi

Proceedings Volume 7945, 79451A (2011) https://doi.org/10.1117/12.879858

KEYWORDS: Gallium nitride, Aluminum nitride, Aluminum, Polarization, Stereolithography, Diodes, Surface roughness, Sapphire, Metalorganic chemical vapor deposition, Heterojunctions

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Proceedings Article | 18 August 2010 Paper

Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates

Erdem Cicek, Zahra Vashaei, Can Bayram, Ryan McClintock, Manijeh Razeghi, Melville Ulmer

Proceedings Volume 7780, 77801P (2010) https://doi.org/10.1117/12.863905

KEYWORDS: Avalanche photodetectors, Gallium nitride, Ultraviolet radiation, Sapphire, Single photon, Photodetectors, Avalanche photodiodes, Ionization, Photon counting, Aluminum nitride

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Proceedings Article | 18 August 2010 Paper

III-nitride-based avalanche photo detectors

Ryan McClintock, Erdem Cicek, Zahra Vashaei, Can Bayram, Manijeh Razeghi, Melville Ulmer

Proceedings Volume 7780, 77801B (2010) https://doi.org/10.1117/12.863962

KEYWORDS: Avalanche photodetectors, Gallium nitride, Photons, Absorption, Ionization, Single photon, Ultraviolet radiation, Aluminum nitride, Signal detection, Avalanche photodiodes

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Proceedings Article | 20 May 2009 Paper

Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

M. Razeghi, C. Bayram

Proceedings Volume 7366, 73661F (2009) https://doi.org/10.1117/12.819390

KEYWORDS: Gallium nitride, Aluminum nitride, Absorption, Stereolithography, Doping, Avalanche photodetectors, Metalorganic chemical vapor deposition, Ultraviolet radiation, Magnesium, Laser sintering

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Proceedings Article | 28 February 2009 Paper

Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

C. Bayram, F. Hosseini Teherani, David Rogers, Manijeh Razeghi

Proceedings Volume 7217, 72170P (2009) https://doi.org/10.1117/12.817033

KEYWORDS: Light emitting diodes, Zinc oxide, Green light emitting diodes, Indium gallium nitride, Electroluminescence, Gallium nitride, Metalorganic chemical vapor deposition, Indium, Solid state lighting, Scanning electron microscopy

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Proceedings Article | 26 January 2009 Paper

Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions

C. Bayram, B. Fain, N. Péré-Laperne, Ryan McClintock, M. Razeghi

Proceedings Volume 7222, 722212 (2009) https://doi.org/10.1117/12.809829

KEYWORDS: Gallium nitride, Aluminum nitride, Metalorganic chemical vapor deposition, Stereolithography, Absorption, Terahertz radiation, Laser sintering, Indium, Superlattices, Doping

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Proceedings Article | 26 January 2009 Paper

III-nitride avalanche photodiodes

Ryan McClintock, Jose Pau, Can Bayram, Bruno Fain, Paul Giedraitis, Manijeh Razeghi, Melville Ulmer

Proceedings Volume 7222, 72220U (2009) https://doi.org/10.1117/12.809704

KEYWORDS: Avalanche photodetectors, Gallium nitride, Absorption, Photons, Doping, Magnesium, Back illuminated sensors, Avalanche photodiodes, Ultraviolet radiation, Sensors

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Proceedings Article | 26 January 2009 Paper

GaN-based nanostructured photodetectors

Jose Luis Pau, Can Bayram, Paul Giedraitis, Ryan McClintock, Manijeh Razeghi

Proceedings Volume 7222, 722214 (2009) https://doi.org/10.1117/12.814983

KEYWORDS: Nanostructuring, Nanostructures, Nanolithography, Gallium nitride, Electron beam lithography, Photodetectors, PIN photodiodes, Photodiodes, Diodes, Measurement devices

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Proceedings Article | 1 February 2008 Paper

III-nitride photon counting avalanche photodiodes

Ryan McClintock, Jose Pau, Kathryn Minder, Can Bayram, Manijeh Razeghi

Proceedings Volume 6900, 69000N (2008) https://doi.org/10.1117/12.776265

KEYWORDS: Avalanche photodetectors, Gallium nitride, Photon counting, Aluminum nitride, Photodetectors, Ultraviolet radiation, External quantum efficiency, Avalanche photodiodes, Resistance, Back illuminated sensors

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Proceedings Article | 20 February 2007 Paper

Etching of ZnO toward the development of ZnO homostructure LEDs

Kathryn Minder, Ferechteh Hosseini Teherani, Dave Rogers, Can Bayram, Ryan McClintock, Patrick Kung, Manijeh Razeghi

Proceedings Volume 6474, 64740Q (2007) https://doi.org/10.1117/12.712784

KEYWORDS: Zinc oxide, Etching, Light emitting diodes, Dry etching, Wet etching, Gallium nitride, Ultraviolet radiation, Heterojunctions, Fabrication, Image processing

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Proceedings Article | 2 February 2007 Paper

III-nitride avalanche photodiodes

Patrick Kung, Ryan McClintock, Jose Luis Pau Vizcaino, Kathryn Minder, Can Bayram, Manijeh Razeghi

Proceedings Volume 6479, 64791J (2007) https://doi.org/10.1117/12.713774

KEYWORDS: Gallium nitride, Avalanche photodetectors, Aluminum nitride, Diodes, Electrons, Sapphire, Photodiodes, Avalanche photodiodes, Ultraviolet radiation, Ionization

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