The roll out of EUV lithography for HVM, including the associated tools for actinic mask and mask blank defect
inspection, require reliable and powerful EUV radiation sources. NANO-UV has developed a unique EUV/soft X-ray
source, the CYCLOPSTM, based on a fast, micro-plasma pulsed discharge, incorporating the i-SoCoMoTM technology; an
intrinsic plasma structure to provide photon collection and delivery. We report on the EUV light source development,
including the extensive numerical modelling which provided the basic parameters required for high power or high
irradiance operating regimes. Without using external physical optics, a peak irradiance exceeding 1018 ph/cm2/s, in a 3
nm bandwidth around 13.5nm, has been recorded at a distance 74 cm downstream from the source, which was operating
at 1 kHz in a He:N2:Xe gas admixture at up to 0.5J per pulse operation. A new Sn-alloy cathode material has enhanced
the output by a factor of 1.5 with the power now delivered in a sub-cm size spot being greater than 20W in 3nm band,
with a typical étendue below 10-2 mm2•sr. NANO-UV can meet the HVM source requirements with its HYDRATM spatial/temporal multiplexed source development. A multiplex of 12 units form HYDRATM -12P having the potential of
reaching 240W (within 3 nm EUV band) at IF demonstrates multiplexing principle.
The next generation of 30-100 metre diameter extremely large telescopes (ELTs) requires large numbers of hexagonal
primary mirror segments. As part of the Basic Technology programme run jointly by UCL and Cranfield University, a
reactive atomic plasma technology (RAP(tm)) emerged from the US Lawrence Livermore National Laboratory (LLNL), is
employed for the finishing of these surfaces. Results are presented on this novel etching technology. The Inductively
Coupled Plasma (ICP) operated at atmospheric pressure using argon, activates the chemical species injected through its
centre and promotes the fluorine-based chemical reactions at the surface. Process assessment trials on Ultra Low
Expansion (ULE(tm)) plates, previously ground at high material removal rates, have been conducted. The quality of the
surfaces produced on these samples using the RAP process are discussed. Substantial volumetric material removal rates
of up to 0.446(21) mm 3/s at the highest process speed (1,200 mm/min) were found to be possible without pre-heating the
substrate. The influences of power transfer, process speed and gas concentration on the removal rates have been
determined. The suitability of the RAP process for revealing and removing sub-surface damage induced by high removal
rate grinding is discussed. The results on SiC samples are reported elsewhere in this conference.
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