Ms. Cecily E. Andes Profile

Cecily E. Andes

Global Account Manager at DuPont Electronics & Industrial

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Author

Publications (5)

Proceedings Article | 20 March 2012 Paper

Evolution of negative tone development photoresists for ArF lithography

Michael Reilly, Cecily Andes, Thomas Cardolaccia, Young Seok Kim, Jong Keun Park

Proceedings Volume 8325, 832507 (2012) https://doi.org/10.1117/12.916633

KEYWORDS: Photoresist developing, Photoresist materials, Chemistry, Lithography, Photomasks, Line width roughness, Polymers, Printing, Semiconducting wafers, Critical dimension metrology

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Proceedings Article | 19 March 2012 Paper

Understanding dissolution behavior of 193nm photoresists in organic solvent developers

Seung-Hyun Lee, Jong Keun Park, Thomas Cardolaccia, Jibin Sun, Cecily Andes, Kathleen O'Connell, George Barclay

Proceedings Volume 8325, 83250Q (2012) https://doi.org/10.1117/12.918045

KEYWORDS: Polymers, Photoresist developing, Photoresist materials, Lithography, Semiconducting wafers, Molecules, Photoresist processing, Molecular interactions, Polymer thin films, Radium

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Proceedings Article | 16 April 2011 Paper

Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

Guillaume Landie, Yongan Xu, Sean Burns, Kenji Yoshimoto, Martin Burkhardt, Larry Zhuang, Karen Petrillo, Jason Meiring, Dario Goldfarb, Martin Glodde, Anthony Scaduto, Matthew Colburn, Jason Desisto, Young Bae, Michael Reilly, Cecily Andes, Vaishali Vohra

Proceedings Volume 7972, 797206 (2011) https://doi.org/10.1117/12.882843

KEYWORDS: Photoresist developing, Photoresist materials, Polymers, Systems modeling, Semiconducting wafers, Optical lithography, Optical proximity correction, Photomasks, Etching, Nanoimprint lithography

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Proceedings Article | 5 April 2007 Paper

Impact of acid diffusion length on resist LER and LWR measured by CD-AFM and CD-SEM

J. Foucher, A. Pikon, C. Andes, J. Thackeray

Proceedings Volume 6518, 65181Q (2007) https://doi.org/10.1117/12.712186

KEYWORDS: Line edge roughness, Atomic force microscopy, Line width roughness, Scanning electron microscopy, Critical dimension metrology, Diffusion, Photoresist materials, Lithography, 3D modeling, Etching

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Proceedings Article | 22 March 2007 Paper

Etch resistance: comparison and development of etch rate models

Damien Perret, Cecily Andes, Kap-Soo Cheon, Mani Sobhian, Charles Szmanda, George Barclay, Peter Trefonas

Proceedings Volume 6519, 651912 (2007) https://doi.org/10.1117/12.712242

KEYWORDS: Etching, Polymers, Photoresist materials, Resistance, Chemical species, Lithography, Error analysis, Photoresist developing, Data modeling, Statistical modeling

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