From latest nanotechnology advances, low-dimensional matter confinement delivered by nanostructuration or few-layer stacking offer new opportunities for ultimate light absorption performances. In this field, semiconducting 2D materials and photonic crystals have already demonstrated promising flexible optical properties from monoatomic to bulk structuration covering visible to IR spectral range. Today, these emerging materials such as Phosphorene, allow reconsideration of some physical effects such as photoconductivity. Indeed, its exploitation in integrated planar structures become c in terms of efficient local contactless control with a high degree of tunability by optics in association with high dark resistivity, fast carrier dynamics, and sub-wavelength light coupling solutions compatibility. Multiscale modeling and design tools implementing material anisotropic parameters from atomic configuration up to mesoscale, in complement with multiscale optical characterization in a large frequency bandwidth opens routes to new microwave signal processing functionalities such as switching, generation, amplification and emission over a large frequency bandwidth, that could not be achieved by full electronic solutions. This paper will report on latest demonstrations of high performance photoconductive structures for high frequency applications and review state-of-the-art research work in this area, with a specific focus on latest demonstrations for airborne applications.
A great interest has been lately initiated in the optoelectronics field for 2D materials with a tunable bandgap. Being able
to choose the bandgap of a material is a huge progress in optoelectronics, since it would permit to overcome the
limitation imposed by the graphene lack of energy bandgap, but also the restriction imposed by already used
semiconductor whose bandgap are fixed and cannot apply for IR-NIR applications. From DFT simulations
predictions, Black Phosphorus (bP) becomes a bidimensional semiconducting material with a direct tunable energy
bandgap from 0.3 eV to 2 eV by controlling number of layers. This material also has a picosecond carrier response
and exceptional mobilities under external excitation. Hence black phosphorus is a promising 2D material candidate
for photoconductive switching under a NIR optical excitation as in telecommunication wavelength range of
1.55 μm. In this paper, material electromagnetic properties analysis is described in a large frequency band from
optical to microwave measurements executed on different samples allowing energy bandgap and work function
dependency to fabrication techniques, anisotropy and multiscale optoelectronic device realization by switch contact
engineering and material passivation or encapsulation. Material implementation in microwave devices opens the
route to new broadband electronic functionalities triggered by optics, thanks to light/matter extreme confinement
degree. In this paper we present fabrication method of bP based microwave photoconductive switch, with a focus on
black phosphorus Raman characterization, and obtained performances.
This paper addresses the interaction between light wave technologies and semiconductors devices at the nanoscale. Research works aiming at the development of emerging 1D and 2D nano materials such as nanodots, nanowires, nanotubes and nanoribbons open the way to overcome the performances bottleneck of conventional microwave photoconductive switches. Such new materials offer new opportunities for the confinement of light/matter interaction and exhibit interesting energy band diagram in an optical wavelength spectrum covering visible to NIR. Strong material interests stays for the generation of very high local density of carriers in contrast with a high dark resistivity, in association with a high carrier mobility. These challenges can be reached today thanks to nanotechnology processes with a high compatibility constraint with submicrometer light coupling solutions and microwave devices and circuits technologies. Modeling and design tools dedicated to photoconductive effect description at nanometer scale, for its implementation in passive and active components must be set up in order to exalt this effect for microwave signal processing functionalities such as switching, generation, amplification and emission over a large frequency bandwidth. This paper will report on latest demonstrations of high performance photoconductive switches for high frequency applications at 0.8μm and 1.5μm based on LT-GaAs, GaAs nanowires and GaInAsSb semiconductor materials.
Microwave photonics contributes through ultrafast devices to the processing of high data rates. In this area, microwave photoconductive switches (MPCSs) in integrated technology have proved their performances to control the transmission of high frequency signals in complex systems. Their ability to switch microwave signal phase and magnitude is fully defined by a complex frequency-dependant ON/OFF ratio RON/OFF determined from S-Parameters measurements in microwave frequency domain. This paper reports on a new design of MPCSs to be used, after realization and evaluation, as a basic block in optically controlled MMIC devices for application in high frequency samplers or phase shifters.
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