Mr. Chenggong Wang Profile

Chenggong Wang

Assistant Specialist at Univ of California Irvine

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Proceedings Article | 13 September 2012 Paper

Methods to protect and recover work function of air exposed transition metal oxide thin films

Irfan Irfan, Chenggong Wang, Alexander Turinske, Yongli Gao

Proceedings Volume 8476, 847616 (2012) https://doi.org/10.1117/12.927812

KEYWORDS: Time multiplexed optical shutter, Annealing, Transition metals, Oxides, Thin films, Oxygen, Organic light emitting diodes, Plasma, Photoemission spectroscopy, Physics

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Insertion of high work function (WF) transition metal oxide (TMO) layers between the anode and the hole transport layer is established to substantially enhance the performance of organic light emitting diodes (OLED). The high WF of transition metal oxide layer has been demonstrated to be the most crucial for the enhancement. The WF of a TMO layer decreases substantially with air exposure, and noticeably by the ambient even inside a low vacuum system. In the present work we discuss various methods to protect and recover the high WF after a TMO thin film has been exposed to air. We report covering a thin organic layer on top of MoO_x to protect the high work function. We found that a thin layer of 1-2 nm organic layer was sufficient to protect the work function of MoO_x thin film underneath. We further report methods to recover already decreased TMO WF due to air exposure. We performed oxygen plasma cleaning of air exposed MoO_x film and found out that oxygen plasma could substantially recover the WF of as deposited MoO_x film. We also performed annealing of air exposed MoO_x film inside an ultra high vacuum system and observed a thin layer of oxygenrich adsorbate layer, which desorbed upon annealing that in turn substantially recovered the MoO_x WF. We discuss the vacuum annealing and the effect of resulting surface on the interface energy level alignment.

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