InGaN-based resonant-cavity light-emitting diode (RC-LED) structure with an embedded 1/4λ-stack nanopipe-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. High refractive index Si-heavily doped GaN (n+-AlGaN:Si) epitaxial layers are transformed into low effective refractive index nanopipe AlGaN layers in the n+-AlGaN:Si/u-GaN stack structure through a doping-selective electrochemical and a lateral wet etching process. The anisotropic optical property of the nanopipe structure in the DBR structure provides an anisotropic and polarized high light reflectance spectra from ultra-violet to green light regions. The central wavelength blueshifted property with a high reflectivity stopband was observed in the angle-dependent reflectance spectra of the nanopipe DBR structure similar to conventional dielectric DBR structure. Ultra-short cavity length in the GaN-based resonant-cavity light-emitting diode had been realized by using the embedded and conductive nanopipe DBR with a narrow divergent angle property. Narrow linewidth, single cavity mode, and high linear polarized light are observed in the GaN-based RC-LED with an anisotropic nanopipe DBR structure which has the potential for the linear polarized vertical cavity surface emitting laser applications.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.