We have developed Direct Optical Wiring (DOW) technology and successfully implemented it in chip-to-chip optical links in the form of commercially available products. The chip-to-chip optical coupling efficiencies using the DOWbased optical links exceed 93% in both in-plane and out-of-plane optical system, where the in-plane optical link includes vertical-cavity surface-emitting lasers (VCSELs) and photodiodes (PDs); and the out-of-plane one directly connects an edge-emitting laser diode to a PD. Such outstanding optical coupling is attributed to the minimized optical reflection and/or scattering in the end-to-end optical link, resulting in an improved bit error rate (BER). LESSENGERS® 800G QSFP-DD SR8 and 400G QSFP112 SR4 optical transceiver modules featuring DOW technology demonstrate the BER of ~ 5 × 10-10 even at an elevated device temperature of 57°C.
The direct optical wiring (DOW) technology which is based on the 3D writing of optically transparent polymer wires using a meniscus-guided method is employed to develop multi-mode optical interconnects for VCSEL-MMF applications. This DOW method, similar in concept to conventional electrical wire bonding, does not require any chemical reactions. DOW bonding is used to optically connect high-speed VCSELs and standard OM3 multi-mode fibers (MMFs). The resulting simplified lens-free transmitter modules show a high coupling efficiency (65%) and 12 Gbit/sec error-free transmission per-channel, which is satisfactory for optical HDMI 2.1 applications. In the presentation, the 4K-60Hz performance transmitted through the HDMI2.1 will be demonstrated and extended single-mode results introduced. We believe that DOW bonding can be a powerful platform technology for optical interconnect and photonic integration for innovative industrial and academic photonic applications.
We investigated the degradation modes in the aging processes of TO-18 packaged (Al, In)GaN laser diodes
grown by metal organic chemical vapor deposition (MOCVD) on low-dislocation-density bulk GaN wafers. The
lifetime-limiting degradation drastically occurred in the initial stage, and we found it was due to the photon-enhanced
carbon deposition on the oxide mirror surface at the laser-emitting facets. The deposited carbon would be originated
mostly from residual organic materials with C-H bonds. The carbon sources could be successfully removed by plasma
cleaning just before cap-welding. The improved lifetime of the plasma cleaned laser diode packed with argon gas
exceeds 2,000 h under 160 mW cw-operation at 60 °C. The lifetime-limiting degradation is attributed to nonradiative
recombination related with the defects extended from GaN substrates. The activation energy of the degradation extracted
from the thermally accelerated aging tests was determined to be 0.81 eV.
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