Mr. Chris Malmberg Profile

Chris Malmberg

at Oregon State Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 5 March 2020 Paper

Effect of hydrogen incorporation on sub-gap density of states in amorphous InGaZnO thin-film transistors

George Mattson, Kyle Vogt, Christopher Malmberg, Paul H.-Y. Cheong, John Wager, Matt Graham

Proceedings Volume 11281, 112811G (2020) https://doi.org/10.1117/12.2545439

KEYWORDS: Hydrogen, Metals, Oxygen, Thin films, Semiconductors, Transistors, Chemical species, Diffusion, Electrons, Amorphous semiconductors

Read Abstract +

Amorphous semiconducting transparent oxides like InGaZnO₄ (a-IGZO) have a broad distribution of metal and oxygen vacancy defects that determine thin film transistor (TFT) characteristics and impact device reliability metrics such as hysteresis. Here, we demonstrate how hydrogen modifies the density of states (DoS) through a novel on-chip method that spectrally resolves trap concentration in a-IGZO spanning the bandgap. Requiring laser energies continuously tunable from 0:26 to 3:1 eV, this method also employs difference frequency generation to access shallow states near the conduction band. We characterize the effect of hydrogen incorporation on the sub-gap peaks of the DoS of an a-IGZO TFT. Specifically, our data suggests hydrogen hybridizes with vacancy defects through metal-hydrogen (M-H) bonds that passivate oxygen vacancy sites and O-H bonds that passivate metal vacancy sites. These interactions result in a suppression of oxygen vacancy and metal vacancy- related trap states in the sub-gap and an enhancement of a metal-hydrogen bonding peak near the VBM. Temperature dependent, photon energy-dependent hysteresis, and transient defect lifetime measurements further reveal the strong impact of hydrogen concentration on a-IGZO TFT performance germane to current optical display technology.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years