KEYWORDS: Modulation, Single sideband modulation, Modulators, Radio over Fiber, Radio optics, Signal to noise ratio, Networks, Optical networks, Single mode fibers, Optical fibers
We present the first demonstration of the generation of single sideband (SSB) modulation using a monolithic integrated
electro-absorption modulated laser (EML) device. Suppression of upper or lower sidebands is observed under
synchronous dual analog narrow band driving of the laser and the modulator sections. The 10 GHz carrier can transport
digital format data for a wide variety of Radio-over-Fiber (RoF) transmission systems. A 50 MBaud/s transmission of a
16-QAM signal has been achieved over 150 km of Standard Single Mode (SMF) fiber. Constellations, eye diagrams and
error vector magnitude (EVM) measurements are presented, all of which are temperature independent up to 45°C. This
demonstration of SSB modulation capability, which allows for signal transmission with a high spectral efficiency, free of
side-band beating and with a uniform signal power over the entire length of the optical fiber, makes the device ideal for
use in both optical metropolitan and optical access networks. Our experimental results establish the dual-EML SSB
transmitter as a serious candidate for optical-wireless network convergence and future OFDM systems.
In this paper we present our recent works on optical injection of Fabry-Perot laser diode for application in access
networks. The injection-locked Fabry-Perot laser diode is used as low-cost colorless transmitters for high-speed optical
access exploiting wavelength-division-multiplexing technology. The modification of main characteristics of Fabry-Perot
laser such as spectral properties, noise and modulation is shown in injection-locking regime. The strong dependence of
these properties onto injection parameters is also given. Finally, the operation of injection-locked Fabry-Perot laser diode
in a wavelength-division-multiplexed optical access system using a novel multi-wavelength master source based on
quantum-dash mode-locked laser is presented and its transmission performances at 2.5 Gb/s are reported.
In this paper we review our recent works on low cost lasers and remote modulators for Optical Network Unit in access
network. Our work is carried out in the context of an FTTH PON migration scenario towards 10Gbit/s base rate as well
as towards more capacity and flexibility using WDM technology. All components are based on the attractive thermal,
gain and absorption properties of AlGaInAs/InP material system. As a first step to the speed increase we propose a new
uncooled 10Gb/s laser based on a self thermal compensation principle. As a next step, new WDM PON architectures will
require wavelength agnostic component for ONU. For this purpose, we demonstrate new colorless concepts on 10Gb/s
remote amplified electro-absorption modulators. We show low-cost FTTH components may also be attractive for
emerging access-metro WDM technology introducing colorless principle in reconfigurable add and drop multiplexers
For high speed remote colorless modulation in FTTH technology, a new 10Gbit/s monolithically integrated amplified
reflective electroabsorption modulator (R-EAM-SOA) is demonstrated over 50nm spectral range and over 20°C-60°C,
with excellent eye diagrams.
We designed a new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InPlayers. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pP and the series resistance around 3 (RC product < 2 ps) of the laser structure was observed. Using this new structure a 1 .3 jtm bulk laser had a nicely smooth optical response with bandwidth in a large excess of 18GHz (our measurement limit). A fitting procedure, using the laser response transfer function, confirmed an neglecting RC product (2 ps), a power limited bandwidth of about 21 GHz and excellent RF modulation efficiency.
The influence of the doping level of the InP p type cladding layer on the differentialexternal efficiency 1Dand on the threshold current density th of 1 . 5 jtm InGaAs-InGaAsP-InP quantum well (QW) lasers has been investigated experimentally and theoretically. The experimental results agree at with our model which takes into account the recombinations and the light absorption in all the layers. This allows to predict the optimum values for the optical cavity thickness and for the number of wells to lower the threshold current.
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