Dr. Daniel K. Johnstone Profile

Dr. Daniel K. Johnstone

Founder at SEMETROL

SPIE Involvement:

Track Chair | Author

Proceedings Article | 20 February 2009 Paper

Electrical defects in AlGaN and InAlN

D. Johnstone, Jacob Leach, Vladimir Kovalskii, Qian Fan, Jingqiao Xie, Hadis Morkoç

Proceedings Volume 7216, 72162R (2009) https://doi.org/10.1117/12.815020

KEYWORDS: Gallium nitride, Capacitance, Temperature metrology, Spectroscopes, Aluminum, Diodes, Semiconductors, Heterojunctions, Spectroscopy, Metalorganic chemical vapor deposition

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Proceedings Article | 20 February 2007 Paper

Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering

Ya. Alivov, B. Xiao, Q. Fan, D. Johnstone, C. Litton, H. Morkoç

Proceedings Volume 6474, 64740F (2007) https://doi.org/10.1117/12.713217

KEYWORDS: Zinc oxide, Heterojunctions, Silicon carbide, Diodes, Temperature metrology, Spectroscopes, Spectroscopy, Light emitting diodes, Capacitance, Fluctuations and noise

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Proceedings Article | 8 February 2007 Paper

Summary of deep level defect characteristics in GaN and AlGaN

Daniel Johnstone

Proceedings Volume 6473, 64730L (2007) https://doi.org/10.1117/12.709709

KEYWORDS: Gallium nitride, Gallium, Nitrogen, Hydrogen, Oxygen, Doping, Silicon, Spectroscopy, Metalorganic chemical vapor deposition, Diodes

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Proceedings Article | 8 February 2007 Paper

Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures

Ya. Alivov, X. Bo, Q. Fan, S. Akarca-Biyikli, D. Johnstone, O. Lopatiuk, L. Chernyak, C. Litton, H. Morkoç

Proceedings Volume 6474, 64740E (2007) https://doi.org/10.1117/12.706300

KEYWORDS: Heterojunctions, Zinc oxide, Temperature metrology, Gallium nitride, Diffusion, Diodes, Metalorganic chemical vapor deposition, Vapor phase epitaxy, Electron beams, Fluctuations and noise

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Proceedings Article | 11 February 2006 Paper

Surface spatial profiles of defects in GaN

D. Johnstone, S. Akarca-Biyikli, J. Xie, Y. Fu, C. Litton, H. Morkoc

Proceedings Volume 6121, 61210N (2006) https://doi.org/10.1117/12.653320

KEYWORDS: Gallium nitride, Gallium, Metalorganic chemical vapor deposition, Diffusion, Polarization, Oxygen, Capacitance, Profiling, Vapor phase epitaxy, Nitrogen

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Proceedings Article | 7 March 2005 Paper

Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE

Daniel Johnstone, Sena Biyikli, Seydi Dogan, Yong Moon, Feng Yun, Hadis Morkoc

Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.591047

KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Capacitance, Diodes, Vapor phase epitaxy, Spectroscopy, Diffusion, Temperature metrology, Physics, Molecular beam epitaxy

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Proceedings Article | 21 May 2002 Paper

Type-II InAs/GaSb superlattices and detectors with lambda c >18m

Manijeh Razeghi, Yajun Wei, Aaron Gin, Gail Brown, Daniel Johnstone

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467673

KEYWORDS: Sensors, Superlattices, Gallium antimonide, Indium arsenide, Diffusion, X-ray diffraction, Photovoltaic detectors, Antimony, Sensor performance, Binary data

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Proceedings Article | 12 June 2001 Paper

GaN deep-level capture barriers

Daniel Johnstone, Mohamad Ahoujja, YungKee Yeo, Louis Guido

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429408

KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Capacitance, Electroluminescence, Temperature metrology, Polarizability, Ions, Sapphire, Phonons, Solids

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Showing 5 of 8 publications

Conference Committee Involvement (4)

Lasers and Applications in Science and Engineering

21 January 2006 | San Jose, United States

Noise and Information in Nanoelectronics, Sensors, and Standards

2 June 2003 | Santa Fe, New Mexico, United States

Fluctuations and Noise in Photonics and Quantum Optics

2 June 2003 | Santa Fe, New Mexico, United States

Quantum Sensing: Evolution and Revolution from Past to Future

27 January 2003 | San Jose, CA, United States

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