Printing technique is a simple and cost effective method to produce electronics. In this
work, self-aligned carbon nanotube thin-film transistor based phased shifter has been used to
fabricate a 1x4 phased array antenna system on a flexible substrate using a combination of ink-jet
printing and stamping techniques. The radiation pattern is measured for different steering
angle conditions. Measured and simulated far field radiation patterns are reported, and both data
sets agree well with each other. The efficiency the 2-bit 1x4 PAA system is calculated to be 42%
including the loss of transmission line, FET switch, and coupling loss of RF probes.
In this paper, we report the transfer and characterization of in-plane silicon nanomembrane based photonic devices on a
Kapton polyimide flexible substrate. Compared with electronic devices and surface normal optical devices, in-plane
photonic devices have stringent requirements on transfer precision because any shift in the position or breakage can
affect the performance of devices. Therefore, a supporting layer consisting of a photoresist is exploited to protect the
device during the transfer process. A modified stamp-assisted transfer technique is employed in order to transfer
nanomembrane devices onto the flexible film and the transfer of large aspect ratio (up to 4000) waveguides and 1x6
multimode interference (MMI) couplers on a flexible Kapton substrate is demonstrated. A two-step cleaving method is
developed in order to prepare the facets of the transferred waveguides and in-plane light coupling into a 60μm wide,
8mm long flexible waveguide from a lensed fiber is demonstrated. This demonstration opens limitless possibilities for a
whole new area of high performance flexible photonic components using silicon nanomembrane technology.
Bending tests of carbon nanotube thin-film transistors on flexible substrate have been characterized in this
paper. The device channel consisting of dense, aligned, 99% pure semiconducting single-walled carbon nanotubes
(SWCNT) are deposited using dip-coat technique on sacrificial substrate and then transferred on to the device substrate.
Ink-jet printing technique is used to form the source, drain and gate electrodes using silver ink. A novel source-drain
contact formation using wet droplet of silver ink prior to CNT thin-film application has been developed to enhance
source-drain contact with the CNT channel. Bending test data on CNT-TFT test structures show minimal change (less
than 10%) in their performance. To reduce the device performance variation due to bending, flexible electronic circuit is
designed such that vertical device orientation is used for backward bending and horizontal orientation is used for forward
bending.
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