Polarized THz radiation is increasingly being investigated and applied in the new interdisciplinary field “TeraNano.” We report the generation of terahertz (THz) radiation by a linearly polarized femtosecond optical pulse in black phosphorus (BP) crystallites grown by chemical vapor deposition. Characterization of THz radiation is performed by time-resolved THz spectroscopy. It was found that BP emits elliptically polarized THz radiation with an ellipticity of ε = 0.77 ± 0.03. A saturation was found in the dependence of the THz intensity on the intensity of the incident optical pump for the latter higher than 6 mJ / cm2. The results of our work can provide new fundamental knowledge needed to create detectors and generators based on BP in the THz range.
Effects of vacuum plasma etching with subsequent thermal annealing on electrical properties of thin ferroelectric lead zirconate-titanate films are studied. It is shown that vacuum plasma etching leads to the decrease of electrical properties of the films due to defects formation. It is found that defects induced by ion-beam and reactive-ion etching demonstrate different behavior after the high temperature post-annealing. The annealing after reactive-ion etching leads to practically complete recovering of the film’s properties, whereas the films annealed after ion-beam etching degrade even more. Polarization properties of the films after vacuum plasma etching are studied by piezo-force microscopy.
This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.
KEYWORDS: Nondestructive evaluation, Dielectrics, Thin films, Monte Carlo methods, X-rays, Electron beams, Silicon, Aluminum, Silica, Scanning electron microscopy
In this work a non-destructive method for measuring the thickness of the dielectric layers consisting of silicon dioxide and silicon nitride has been developed using a scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDS). Rising in accelerating voltage of electron beam leads to increasing in the depth of generation of the characteristic X-ray. If the ratio of the signal intensity of one of the substrate’s elements to the noise equal to 3 suggests that the generation’s depth of the characteristic X-ray coincides with the thickness of the overlying film. Dependence of the overlying film's thickness on the accelerating voltage can be plotted. Validation of the results was carried out by using the equation of Anderson-Hassler. The generation’s volume of the characteristic X-Ray was simulated by CASINO program. The simulations results are in good agreement with experimental results for small thicknesses.
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