The surface properties of Si(111) : H can be modeled by means of a Si slab with increasing number of layers. A slab is
modeled here with a finite periodic potential for electrons, parameterized with information about atomic radii and
electron binding energies. The model is then solved numerically to obtain electronic energy levels and the shape of layer
orbitals. The procedure provides trends in confinement and optical absorption intensities. Results include electronic band
gap excitation energies, and intensities of absorption as function of light frequency, α(ω), from calculated electric
transition dipoles and density of states. Electronic orbitals obtained here and from previous ab initio calculations show
patterns of periodicity due to confinement effects. These effects influence the optical properties of the surface when it is
excited by visible light as described by means of absorption selection rules. Our results for the absorption coefficient are
compared with experimental curves showing the same pattern of stepwise increases with increasing photon energies.
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