Vertical stacks based on high-power semiconductor lasers and low-voltage high-current AlGaAs/GaAs and InGaAs/AlGaAs/GaAs thyristors have been developed and studied for generating current pulse in low-impedance load circuits based on semiconductor lasers. Pump current pulses with an amplitude up to 200 A for AlGaAs/GaAs thyristors and up to 70 A for InGaAs/AlGaAs/GaAs thyristors were realized in broad area diode lasers and 3-stripe diode laser mini bars, with optical pulse duration of 40-600 ns and a total peak power of about 78 W. The feasibility of generating current pulses with an amplitude of 16 A and a duration of 2.5 ns is shown, which makes it possible to obtain laser pulses with a peak power of 8 W and a duration of 2 ns. It is shown that the parallel joint of single thyristors allows one to multiply the increase in the current pulse amplitude, while maintaining efficiency and duration.
Sergey Slipchenko, Aleksandr Podoskin, Olga Soboleva, Maxim Zakharov, Kirill Bakhvalov, Dmitrii Romanovich, Nikita Pikhtin, Il`ya Tarasov, Timur Bagaev, Maxim Ladugin, Aleksandr Marmalyuk, Vladimir Simakov
We present a new approach based on the integration of the functions of a high-efficiency current switch and a laser emitter into a single heterostructure as elements of time-of-flight (TOF) systems. The approach being developed employs the effect of an electrical bistability, which occurs in the general case in thyristor structures. We report recent results obtained in a study of the dynamic electrical and optical characteristics of the pulsed sources we developed. An effective generation of 2- to 100-ns laser pulses at a wavelength of 905 nm is demonstrated. The possibility of generating laser pulses shorter than 1 ns is considered. The maximum peak power reached values of 7 and 50 W for 10- and 100-ns pulses, respectively.
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