KEYWORDS: Semiconducting wafers, High power lasers, Semiconductor lasers, Diodes, Optics manufacturing, Manufacturing, Electron beam lithography, Reflectivity, Wafer-level optics, High power diode lasers
This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 14W CW in the 920nm range. Key feature is the use of a multiple-order Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. In present paper, on the same wafer, three pitches DBR-HPDLs 2.5nm spaced have been demonstrated with excellent characteristics of power, spectral purity and stability. Moreover, excellent uniformity of performances across the wafer with different emitted wavelengths demonstrates the maturity of proposed technology for high yield, high volume laser diode production for wavelength stabilized applications.
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