As the Manufacturing Rule Check (MRC) error counts are very huge, it has been getting difficult to
review by each point and maybe some of the design errors will be ignored. It's necessary to reduce
the review error counts and improve the checking methods.
The paper presents an error classification function and auto-waived mechanism for decreasing the
repeated MRC errors in MRC report. In auto-waived mechanism, the report will omit the error point
if it is same as previous report and the defect location output will keep all of the error points for Do
Not Inspection Area (DNIR) reference. (DNIR needs customer's approval).
Furthermore, it is possible to develop an auto-waived function to skip the confirmed errors which is
provided by customer with a marking information table or GDS/OASIS database.
Besides, this paper also presents how these errors can be grouping and reducing checking time.
With the use of 193nm lithography, haze growth has increasingly become a critical issue for
photomask suppliers and wafer fabs. Recent photomask industry surveys indicate the occurrence
rate of haze is 10 times higher on 193nm masks compared to 248nm masks. Additionally, work has
been presented that shows strong relationship between environmental conditions around the
photomask and the occurrence of haze at 193nm. This underscores the need to better understand
the basic mechanisms of haze and the measures such as environmental airborne molecular
contamination (AMC) control which can be employed to reduce the occurrence of haze in use.
A custom excimer laser test system capable of 193nm and 248nm wavelengths was built to
accelerate haze growth and to better understand haze formation mechanisms. Work on materials
impact on haze growth, such as pellicles and reticle compacts, as well as preliminary findings on
environmental impacts have been presented previously. Results indicate even on pristine
surfaces haze can grow when contaminants are present in the storage and use environment. The test
system has been upgraded to include tight control on the concentration of specific airborne
contaminants of concern. The impact of these contaminants and their relative concentrations will be
examined in this paper and are presented to aid the industry in determining the level of
environmental control needed over the life of a reticle.
Cleaning chemistry residue in photomask manufacturing is one of root causes to generate HAZE over surface of photomask for 193nm and shorter wavelength exposure tools. In order to reduce the residue, chemical free process is one of targets in photomask industry. In this paper novel clean technology without sulfuric acid and ammonia chemical are shown to manufacture sub-90nm node photomask. Photo and E-beam resist were removed by plasma and ozone water clean instead of sulfuric acid. SPM and APM in final clean sequence before defect inspection were substituted with ozone water and hydrogen water respectively. The clean performance was demonstrated in real production of 193nm phase shift mask. Sulfate and Ammonia residue after final clean were controlled same as blank material level without any clean process.
KEYWORDS: Databases, Computing systems, Error control coding, Photomasks, Data storage, Lithium, Computed tomography, Data archive systems, Manufacturing, Data storage servers
We have developed a database verification and management system to ensure incoming database accuracy before mask
data prep (MDP) and optimize computing resource. The system includes incoming database pre-check (IDPCS),
backup/restore management functions and CPU resource management, which is queue manager system (QM). To ensure
database accuracy through pre-check function can reduce data confirmation time and prevent data prep re-work if using
un-excepting database. CPU resource management function has the possibility to optimize computing resource.
Backup/Restore function presents automatic archive concept for data management.
Chrome-less Phase Lithography (CPL) was introduced as a potential strong Resolution Enhancement Technology (RET) for 90nm to 65nm node critical layers. One of the important issue with trench type chrome-less mask manufacturing for post structure is quartz defect detection capability. This study will focus on half pitch 80nm (1X) design node and apply different trench sizes and programmed defect sizes. All test patterns will be inspected on KLA-Tencor TeraScan576 inspection tool with both standard Die-to-Die (DD) and TeraPhase DD inspection modes to determine defect detection capability. All programmed defects will also be simulated on the Zeiss AIMS Fab-193 to determine wafer CD error. Finally, we will establish the relationship between trench size, defect detection capability and printability, and summarize the chrome-less mask quartz defect detection capability for 80nm post structure application.
A ne optical microlithography - optical holographic microlithography is described in the paper. The primary principle, hologram repositioning, main advantages, basic applications and some experimental system aspects of the optical holographic microlithography are also described.
The structure, principle and manufacturing process of a single layer attenuated phase-shifting mask which is compatible with the traditional Cr mask fabrication technology are introduced in the paper. Partial experimental results are provided.
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