We report our recent progress in developing inorganic sheets integrating electromagnetic interference (EMI) shielding and infrared (IR) detection functionalities. This work is crucial as the increasing use of radio-frequency (RF) devices saturates the environment with electromagnetic radiation capable of disrupting the operation of electronic components, including sources and detectors of IR radiation that are widely used in commercial and military applications. Therefore, IR devices must be enclosed by a material that blocks RF waves while allowing the transmission of IR radiation. Here, we show that single-crystalline semiconductor membranes are viable candidates for shielding IR devices from EMI as they provide high shielding effectiveness and optical transmittance. In addition, we demonstrate that thin junction photodiodes can be integrated on the back surface of the semiconductor membrane, making the latter a multi-functional material.
We fabricated and characterized a vertical spin valve based on single-crystalline semiconductor nanomembranes engineered with 2D arrays of screw dislocations throughout their thickness. The device includes a bottom soft ferromagnetic contact (NiFe), semiconductors nanomembranes hosting screw dislocations, and a top hard ferromagnetic contact (Co). A change in the longitudinal magnetoresistance at the measured coercivity of NiFe was detected at 300 K solely in the devices embedding screw dislocations, suggesting that the line defects are responsible for the observed spin valve effect.
We present an approach to realize antimonide based superlattices on silicon substrates without using conventional
Indium-bump hybridization. In this approach, PIN based superlattice detectors are grown on top of a 60 nm Al0.6Ga0.4Sb
sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxiallift
off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the
pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels
was done using an optical microscope, scanning electron microscopy and photoluminescence. The interface between the
transferred pixels and the new substrate was abrupt and no significant degradation in the optical quality was observed.
An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements
provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a
control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed
approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could
dramatically reduce the cost of these detectors.
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