Dr. Francis Goodwin Profile

Dr. Francis Goodwin

at GLOBALFOUNDRIES Inc

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Author

Publications (6)

Proceedings Article | 19 March 2018 Presentation + Paper

Holistic analysis of aberration induced overlay error in EUV lithography

Yulu Chen, Lars Liebmann, Lei Sun, Allen Gabor, Shuo Zhao, Feixiang Luo, Obert Wood, Xuemei Chen, Daniel Schmidt, Michael Kling, Francis Goodwin

Proceedings Volume 10583, 105830D (2018) https://doi.org/10.1117/12.2297027

KEYWORDS: Aberration theory, Zernike polynomials, Diffraction, Extreme ultraviolet lithography, Wavefronts, Error analysis, Scanners, Photomasks, Overlay metrology, Lithography

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Proceedings Article | 16 October 2017 Paper

Rigorous simulation of EUV mask pellicle

Yulu Chen, Xiangyu Zhou, Ulrich Klostermann, Lei Sun, Obert Wood, Mariya Braylovska, Sajan Marokkey, Francis Goodwin

Proceedings Volume 10451, 104510S (2017) https://doi.org/10.1117/12.2280339

KEYWORDS: Pellicles, Photomasks, Extreme ultraviolet, Nanoimprint lithography, Extreme ultraviolet lithography, Transmittance, Temporal coherence, Particles, Nickel, High volume manufacturing

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Proceedings Article | 30 March 2017 Presentation + Paper

Design intent optimization at the beyond 7nm node: the intersection of DTCO and EUVL stochastic mitigation techniques

Michael Crouse, Lars Liebmann, Vince Plachecki, Mohamed Salama, Yulu Chen, Nicole Saulnier, Derren Dunn, Itty Matthew, Stephen Hsu, Keith Gronlund, Francis Goodwin

Proceedings Volume 10148, 101480H (2017) https://doi.org/10.1117/12.2260865

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Stochastic processes, Optical lithography, Lithography, Tolerancing, Computational lithography, Design for manufacturability, Manufacturing, Back end of line, Source mask optimization, Photomasks, Logic, Optical proximity correction, Nanoimprint lithography

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The initial readiness of EUV patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. Thus, Design Technology Co-optimization (DTCO) has become a critical part of technology enablement as scaling has become more challenging and the industry pushes the limits of EUV lithography. The working partnership between the design teams and the process development teams typically involves an iterative approach to evaluate the manufacturability of proposed designs, subsequent modifications to those designs and finally a design manual for the technology. While this approach has served the industry well for many generations, the challenges at the Beyond 7nm node require a more efficient approach. In this work, we describe the use of “Design Intent” lithographic layout optimization where we remove the iterative component of DTCO and replace it with an optimization that achieves both a “patterning friendly” design and minimizes the well-known EUV stochastic effects. Solved together, this “design intent” approach can more quickly achieve superior lithographic results while still meeting the original device’s functional specifications.

Specifically, in this work we will demonstrate “design intent” optimization for critical BEOL layers using design tolerance bands to guide the source mask co-optimization. The design tolerance bands can be either supplied as part of the original design or derived from some basic rules. Additionally, the EUV stochastic behavior is mitigated by enhancing the image log slope (ILS) for specific key features as part of the overall optimization. We will show the benefit of the “design intent approach” on both bidirectional and unidirectional 28nm min pitch standard logic layouts and compare the more typical iterative SMO approach. Thus demonstrating the benefit of allowing the design to float within the specified range. Lastly, we discuss how the evolution of this approach could lead to layout optimization based entirely on some minimal set of functional requirements and process constraints.

Proceedings Article | 28 March 2017 Paper

High throughput and dense sampling metrology for process control

Lei Sun, Tsunehito Kohyama, Kuniaki Takeda, Hiroto Nozawa, Yuji Asakawa, Taher Kagalwala, Granger Lobb, Frank Mont, Xintuo Dai, Shyam Pal, Wenhui Wang, Jongwook Kye, Francis Goodwin

Proceedings Volume 10145, 101452D (2017) https://doi.org/10.1117/12.2258623

KEYWORDS: Process control, Metrology, Optical metrology, Defect inspection, Inspection, Semiconducting wafers, Critical dimension metrology, Finite element methods, Wafer-level optics, Line edge roughness, Lithography, Optics manufacturing

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Proceedings Article | 27 March 2017 Paper

Monte Carlo sensitivity analysis of EUV mask reflectivity and its impact on OPC accuracy

Yulu Chen, Obert Wood, Jed Rankin, Eric Gullikson, Julia Meyer-Ilse, Lei Sun, Zhengqing John Qi, Francis Goodwin, Jongwook Kye

Proceedings Volume 10143, 101431S (2017) https://doi.org/10.1117/12.2258121

KEYWORDS: Data modeling, Photomasks, Reflectivity, Extreme ultraviolet, Optical proximity correction, Monte Carlo methods, Extreme ultraviolet lithography, Reflectors, Statistical analysis, Electromagnetic theory, Surface roughness, Silicon, Molybdenum, Scanning tunneling microscopy

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Proceedings Article | 24 March 2017 Presentation + Paper

Printability and actinic AIMS review of programmed mask blank defects

Erik Verduijn, Pawitter Mangat, Obert Wood, Jed Rankin, Yulu Chen, Francis Goodwin, Renzo Capelli, Sascha Perlitz, Dirk Hellweg, Ravi Bonam, Shravan Matham, Nelson Felix, Daniel Corliss

Proceedings Volume 10143, 101430K (2017) https://doi.org/10.1117/12.2260053

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Extreme ultraviolet, Printing, Bridges, Extreme ultraviolet lithography, Inspection, Chromium, Atomic force microscopy

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Showing 5 of 6 publications

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