Mr. Frank van de Mast Profile

Frank van de Mast

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 24 March 2016 Paper

A study of swing-curve physics in diffraction-based overlay

Kaustuve Bhattacharyya, Arie den Boef, Greet Storms, Joost van Heijst, Marc Noot, Kevin An, Noh-Kyoung Park, Se-Ra Jeon, Nang-Lyeom Oh, Elliott McNamara, Frank van de Mast, SeungHwa Oh, Seung Yoon Lee, Chan Hwang, Kuntack Lee

Proceedings Volume 9778, 97781I (2016) https://doi.org/10.1117/12.2222040

KEYWORDS: Accuracy assessment, Overlay metrology, Physics, Image processing, Process control, Optical properties, Polarization, Metrology, Inspection, Diffraction gratings, Semiconducting wafers, Computer simulations, Diffraction, Detection theory

Read Abstract +

Proceedings Article | 2 April 2014 Paper

Overlay improvements using a real time machine learning algorithm

Emil Schmitt-Weaver, Michael Kubis, Wolfgang Henke, Daan Slotboom, Tom Hoogenboom, Jan Mulkens, Martyn Coogans, Peter ten Berge, Dick Verkleij, Frank van de Mast

Proceedings Volume 9050, 90501S (2014) https://doi.org/10.1117/12.2046914

KEYWORDS: Overlay metrology, Semiconducting wafers, Machine learning, Metrology, Scanners, Sensors, Control systems, Optical alignment, Time metrology, Neural networks

Read Abstract +

Proceedings Article | 13 March 2010 Paper

Towards ultimate optical lithography with NXT:1950i dual stage immersion platform

Tom Castenmiller, Frank van de Mast, Toine de Kort, Coen van de Vin, Marten de Wit, Raf Stegen, Stefan van Cleef

Proceedings Volume 7640, 76401N (2010) https://doi.org/10.1117/12.847025

KEYWORDS: Semiconducting wafers, Overlay metrology, Computer programming, Optical alignment, Sensors, Interferometers, Reticles, Optical lithography, Metrology, Calibration

Read Abstract +

Optical lithography, currently being used for 45-nm semiconductor devices, is expected to be extended further towards the 32-nm and 22-nm node. A further increase of lens NA will not be possible but fortunately the shrink can be enabled with new resolution enhancement methods like source mask optimization (SMO) and double patterning techniques (DPT). These new applications lower the k1 dramatically and require very tight overlay control and CD control to be successful. In addition, overall cost per wafer needs to be lowered to make the production of semiconductor devices acceptable. For this ultimate era of optical lithography we have developed the next generation dual stage NXT:1950i immersion platform. This system delivers wafer throughput of 175 wafers per hour together with an overlay of 2.5nm. Several extensions are offered enabling 200 wafers per hour and improved imaging and on product overlay. The high productivity is achieved using a dual wafer stage with planar motor that enables a high acceleration and high scan speed. With the dual stage concept wafer metrology is performed in parallel with the wafer exposure. The free moving planar stage has reduced overhead during chuck exchange which also improves litho tool productivity. In general, overlay contributors are coming from the lithography system, the mask and the processing. Main contributors for the scanner system are thermal wafer and stage control, lens aberration control, stage positioning and alignment. The back-bone of the NXT:1950i enhanced overlay performance is the novel short beam fixed length encoder grid-plate positioning system. By eliminating the variable length interferometer system used in the previous generation scanners the sensitivity to thermal and flow disturbances are largely reduced. The alignment accuracy and the alignment sensitivity for process layers are improved with the SMASH alignment sensor. A high number of alignment marker pairs can be used without throughput loss, and furthermore the GridMapper functionality which is using the inter-die and intra-die scanner capability can reduce overlay errors coming from mask and process without productivity impact. In this paper we will present the main design features and discuss the system performance of the NXT:1950i system, focusing on the improvements made in overlay and productivity. We will show data on imaging, overlay, focus and productivity supporting the 3X-nm node and we will discuss next improvement steps towards the 2X-nm node.

Proceedings Article | 16 March 2009 Paper

Enabling the lithography roadmap: an immersion tool based on a novel stage positioning system

Fred de Jong, Bert van der Pasch, Tom Castenmiller, Bert Vleeming, Richard Droste, Frank van de Mast

Proceedings Volume 7274, 72741S (2009) https://doi.org/10.1117/12.814254

KEYWORDS: Semiconducting wafers, Computer programming, Lithography, Interferometers, Optical alignment, Time metrology, Overlay metrology, Metrology, Reticles, Refractive index

Read Abstract +

Proceedings Article | 26 June 2003 Paper

Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications

Jos de Klerk, Louis Jorritsma, Eelco van Setten, Richard Droste, Richard du Croo de Jongh, Steven Hansen, Dan Smith, Mark van de Kerkhof, Frank van de Mast, Paul Graeupner, Thomas Rohe, Klaus Kornitzer

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485372

KEYWORDS: Imaging systems, Photomasks, Semiconducting wafers, Control systems, Binary data, Reticles, Optics manufacturing, Critical dimension metrology, Phase shifts, Distortion

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years