Prof. Ganesh Balakrishnan Profile

Prof. Ganesh Balakrishnan

Professor at Univ of New Mexico

SPIE Involvement:

Author

Publications (36)

Proceedings Article | 4 October 2024 Presentation

Semiconductor membranes for millimeter-wave shielding and infrared detection

Emma Renteria, Grant Heileman, Jordan Neely, Sadhvikas Addamane, Thomas Rotter, Ganesh Balakrishnan, Christos Christodoulou, Francesca Cavallo

Proceedings Volume PC13119, PC131191R (2024) https://doi.org/10.1117/12.3028202

KEYWORDS: Semiconductors, Infrared detection, Photodiodes, Infrared radiation, Transmittance, P-type semiconductors, Optical fabrication, Gallium arsenide, Infrared detectors, Heterojunctions

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Proceedings Article | 10 June 2024 Presentation

An approach to realize passively coupled PCSEL arrays

Chhabindra Gautam, Mingsen Pan, Yudong Chen, Thomas Rotter, Ganesh Balakrishnan, Weidong Zhou

Proceedings Volume PC13029, PC1302901 (2024) https://doi.org/10.1117/12.3017582

KEYWORDS: Semiconductor lasers, Vertical cavity surface emitting lasers, Quantum experiments, Photonic crystals, Optical coherence, Laser applications, Feedback control, Quantum wells, Quantum simulation, Quantum optical communication

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Proceedings Article | 13 March 2024 Presentation

Impact of electrical injection on PCSELs by utilizing different electrode designs

Chhabindra Gautam, Mingsen Pan, Subhashree Seth, Thomas Rotter, Ming Zhou, Ricky Gibson, Bradley Thompson, Shanhui Fan, Ganesh Balakrishnan, Weidong Zhou

Proceedings Volume 12867, 1286710 (2024) https://doi.org/10.1117/12.3002447

KEYWORDS: Electrodes, Semiconductor lasers, Photonic crystals, Three dimensional sensing, Semiconductors, Optical simulations, Materials properties, Materials processing, Light sources, Laser applications

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Proceedings Article | 13 March 2024 Presentation

Optimization of GaSb buffer layers on silicon substrates for optoelectronic applications

Mega Frost, Fatih Ince, Darryl Shima, Thomas Rotter, Ganesh Balakrishnan

Proceedings Volume PC12891, PC128910A (2024) https://doi.org/10.1117/12.3002723

KEYWORDS: Silicon, Gallium antimonide, Tunable filters, Optoelectronics, Transmission electron microscopy, Mid-IR, Laser development, X-ray diffraction, Spectroscopy, Semiconductor lasers

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Proceedings Article | 9 March 2024 Presentation

Molecular beam epitaxy based growth of GaSb quantum dots on silicon substrates

Mega Frost, Subhashree Seth, Fatih Ince, Darryl Shima, Thomas Rotter, Ganesh Balakrishnan

Proceedings Volume PC12882, PC1288208 (2024) https://doi.org/10.1117/12.3003063

KEYWORDS: Quantum dots, Gallium antimonide, Silicon, Molecular beam epitaxy, Gallium arsenide, Transmission electron microscopy, Spectroscopy, Photoluminescence, Lithography, HF etching

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Proceedings Article | 9 June 2023 Presentation

Design and fabrication of basic silicon quantum photonic integrated circuits

Marek Osinski, Sami Nazib, Troy Hutchins-Delgado, Erika Sommer, Hosuk Lee, Loic Djamen Tchapda, Ruth Gyan-Darkwa, Erum Jamil, Thomas Rotter, Ganesh Balakrishnan, John Nogan, Tzu-Ming Lu, Ivan Komissarov, Roman Sobolewski

Proceedings Volume PC12570, PC1257003 (2023) https://doi.org/10.1117/12.2670470

KEYWORDS: Waveguides, Single photon detectors, Silicon, Quantum photonics, Integrated circuits, Fabrication, Design and modelling, Quantum entanglement, Quantum coherence, Active optics

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Proceedings Article | 15 March 2023 Presentation + Paper

Development of arsenide- and antimonide-based epitaxial quantum dots for single photon emitter applications

G. Balakrishnan

Proceedings Volume 12430, 124300M (2023) https://doi.org/10.1117/12.2650865

KEYWORDS: Quantum dots, Indium arsenide, Gallium arsenide, Gallium antimonide, Quantum emitters, Quantum dot emission, Transmission electron microscopy

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Proceedings Article | 5 March 2022 Presentation

Interband cascade LEDs grown on silicon substrates

Chadwick Canedy, William Bewley, Stephanie Tomasulo, Chul Soo Kim, Charles Merritt, Igor Vurgaftman, Jerry Meyer, Mijin Kim, Thomas Rotter, Ganesh Balakrishnan, Terry Golding

Proceedings Volume PC12006, PC120060B (2022) https://doi.org/10.1117/12.2607369

KEYWORDS: Silicon, Semiconducting wafers, Gallium antimonide, Light emitting diodes, Continuous wave operation, Mid-IR, Manufacturing, Control systems, Surface roughness, Photonic integrated circuits

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Proceedings Article | 5 September 2019 Presentation + Paper

Temperature dependent absorption and emission enhancement factors in plasmon coupled semiconductor heterostructures

Chih-Feng Wang, Sadhvikas Addamane, Ganesh Balakrishnan, Claudia Rivera Lebron, Sharmin Haq, Bisweswar Patra, Kevin Malloy, Terefe Habteyes

Proceedings Volume 11081, 110812A (2019) https://doi.org/10.1117/12.2527770

KEYWORDS: Quantum wells, Gallium arsenide, Plasmons, Absorption, Plasmonics, Diffusion, Interfaces, Near field, Solids, Semiconductors

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Proceedings Article | 18 March 2019 Paper

Wide-temperature-range characterization of 1.55-µm phosphorus-free multiple-quantum-well lasers grown by MBE on InP

Sami Adnan Nazib, Troy Hutchins-Delgado, Diana Magana Contreras, Hosuk Lee, Estania Jean Charles, Nathan Withers, Sadhvikas Addamane, Emma Renteria, John Nogan, Ganesh Balakrishnan, Marek Osiński

Proceedings Volume 10912, 109120X (2019) https://doi.org/10.1117/12.2515648

KEYWORDS: Cryogenics, Semiconductor lasers, Temperature metrology, Resistance

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Proceedings Article | 4 March 2019 Paper

Characterization of MBE-grown 1.55-µm GaSb-based multiple-quantum-well lasers at cryogenic temperatures

Troy Hutchins-Delgado, Sami Adnan Nazib, Hosuk Lee, Diana Magana Contreras, Estania Jean Charles, Nathan Withers, Sadhvikas Addamane, Emma Renteria, John Nogan, Ganesh Balakrishnan, Marek Osiński

Proceedings Volume 10912, 109120I (2019) https://doi.org/10.1117/12.2515649

KEYWORDS: Cryogenics, Temperature metrology, Cladding, Semiconductor lasers, Laser applications, Resistance

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Proceedings Article | 23 May 2018 Presentation + Paper

Vertical transport study of InAs/GaSb type-II superlattice nBp MWIR detectors using electron beam-induced current measurement

Z. Taghipour, E. Steenbergen, S. Maximenko, C. Morath, V. Cowan, S. Mathews, E. Aifer, G. Balakrishnan, S. Krishna

Proceedings Volume 10624, 106240N (2018) https://doi.org/10.1117/12.2309658

KEYWORDS: Diffusion, Mid-IR, Superlattices, Electron transport, Gallium antimonide

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Proceedings Article | 21 May 2018 Presentation + Paper

Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications

Lilian Casias, Christian Morath, Elizabeth Steenbergen, Preston Webster, Jin Kim, Vincent Cowan, Ganesh Balakrishnan, Sanjay Krishna

Proceedings Volume 10624, 106240M (2018) https://doi.org/10.1117/12.2305431

KEYWORDS: Infrared detectors, Sensors, Doping, Infrared sensors, Photodiodes, Quantum efficiency, Interfaces, Electron transport, Gallium antimonide, Spectrum analysis

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Proceedings Article | 15 February 2018 Paper

Structure and cavity geometry optimization for ultrashort and high power pulse generation from a VECSEL

Alexandre Laurain, Robert Rockmore, Caleb Baker, Isak Kilen, Sadhvikas Addamane, Ganesh Balakrishnan, Jorg Hader, Antje Ruiz Perez, Wolfgang Stolz, Stephan Koch, Jerome Moloney

Proceedings Volume 10515, 105150H (2018) https://doi.org/10.1117/12.2288526

KEYWORDS: Quantum wells, Mode locking, Coating, Ultrafast phenomena, Reflectivity, Structural design, Semiconductors, Pulsed laser operation, Refractive index, Silicon

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Proceedings Article | 15 February 2018 Presentation + Paper

Degradation mechanism of SESAMs under intense ultrashort pulses in modelocked VECSELs

Sadhvikas Addamane, Darryl Shima, Alexandre Laurain, Hsiu-Ting Chan, Ganesh Balakrishnan, Jerome Moloney

Proceedings Volume 10515, 105150T (2018) https://doi.org/10.1117/12.2290684

KEYWORDS: Mode locking, Quantum wells, Indium gallium arsenide, Gallium arsenide, Transmission electron microscopy, Reflectivity, Femtosecond phenomena, Semiconductors, Laser damage threshold, Absorption

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Proceedings Article | 30 August 2017 Presentation + Paper

Distance and temperature dependent plasmon-enhanced carrier generation and diffusion in InAs/InGaAs/GaAs near-infrared photodetectors

Terefe Habteyes, Sharmin Haq, Sadhvikas Addamane, Bijesh Kafle, Ganesh Balakrishnan, Danhong Huang

Proceedings Volume 10404, 1040408 (2017) https://doi.org/10.1117/12.2275787

KEYWORDS: Diffusion, Gallium arsenide, Indium arsenide, Sensors, Infrared detectors, Near field, Quantum dots, Photodetectors, Surface plasmons, Infrared sensors

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Proceedings Article | 22 February 2017 Presentation + Paper

Multi-angle VECSEL cavities for dispersion control and multi-color operation

Caleb Baker, Maik Scheller, Alexandre Laurain, Hwang-Jye Yang, Antje Ruiz Perez, Wolfgang Stolz, Sadhvikas Addamane, Ganesh Balakrishnan, R. Jason Jones, Jerome Moloney

Proceedings Volume 10087, 100870B (2017) https://doi.org/10.1117/12.2250579

KEYWORDS: Femtosecond phenomena, Laser development, Continuous wave operation, Mode locking, Polarization, Optical filters, Fabry–Perot interferometers, Quantum wells, Vertical external cavity surface emitting lasers, Terahertz radiation, Antireflective coatings

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Proceedings Article | 2 November 2016 Presentation

Effect of AlSb quantum dots on efficiency of GaAs solar cell (Conference Presentation)

Ahmad Mansoori, Sadhvikas Addamane, Emma Renteria, Darryl Shima, Christopher Hains, Ganesh Balakrishnan

Proceedings Volume 9937, 99370A (2016) https://doi.org/10.1117/12.2238291

KEYWORDS: Solar cells, Gallium arsenide, Quantum efficiency, Quantum dots, Absorption, Sun, Solar energy, Current controlled current source

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Proceedings Article | 10 March 2016 Paper

Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs

Caleb Baker, Maik Scheller, Hwang-Jye Yang, Stephan Koch, Ronald Jones, Jerome Moloney, Antje Ruiz Perez, Wolfgang Stolz, Sadhvikas Addamane, Ganesh Balakrishnan

Proceedings Volume 9734, 97340K (2016) https://doi.org/10.1117/12.2213671

KEYWORDS: Mode locking, Ultrafast phenomena, Semiconductors, Measurement devices, Femtosecond phenomena, Carrier dynamics, Ytterbium, Fiber lasers, Laser beam diagnostics, Laser sources, Reflectivity, Quantum wells, Picosecond phenomena, Mirrors

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Proceedings Article | 26 August 2015 Presentation + Paper

Ordered arrays of bottom-up III-nitride core-shell nanostructures

Ashwin Rishinaramangalam, Mohsen Nami, Benjamin Bryant, Rhett Eller, Darryl Shima, Michael Fairchild, Ganesh Balakrishnan, S. R. Brueck, Daniel Feezell

Proceedings Volume 9553, 955308 (2015) https://doi.org/10.1117/12.2191726

KEYWORDS: Gallium nitride, Nanostructures, Light emitting diodes, Metalorganic chemical vapor deposition, Quantum wells, Scanning electron microscopy, Crystals, Gallium, Indium gallium nitride, Nanowires

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Proceedings Article | 16 March 2015 Paper

GaSb thermophotovoltaics: current challenges and solutions

N. Rahimi, D. Herrera, A. Aragon, D. Shima, O. Romero, T. Rotter, T. Busani, O. Lavrova, G. Balakrishnan, L. Lester

Proceedings Volume 9358, 935816 (2015) https://doi.org/10.1117/12.2079635

KEYWORDS: Gallium antimonide, Diodes, Crystals, Indium gallium arsenide antimonide, Annealing, Ion implantation, Beryllium, Scanning electron microscopy, Resistance, Gallium

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Proceedings Article | 12 March 2014 Paper

Flash extreme ultraviolet holographic microscopy in a table top setup

Nils Monserud, Erik Malm, Przemyslaw Wachulak, Huiwen Xu, Ganesh Balakrishnan, Weilun Chao, Erik Anderson, Mario Marconi

Proceedings Volume 8949, 89490K (2014) https://doi.org/10.1117/12.2041698

KEYWORDS: Holography, Extreme ultraviolet, Holograms, Microscopy, Zone plates, Fourier transforms, Scanning electron microscopy, Spatial resolution, Temporal resolution, Oscillators

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Proceedings Article | 7 March 2014 Paper

Beryllium implant activation and damage recovery study in n-type GaSb

N. Rahimi, M. Behzadirad, Emma Renteria, D. Shima, Ayse Muniz, T. Busani, Olga Lavrova, G. Balakrishnan, L. Lester

Proceedings Volume 8981, 89811Q (2014) https://doi.org/10.1117/12.2040276

KEYWORDS: Gallium antimonide, Annealing, Beryllium, Crystals, Diodes, Semiconducting wafers, Doping, Antimony, Ions, Atomic force microscopy

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Proceedings Article | 7 March 2014 Paper

Toward dynamic metamaterials for monothically integrated multilayer polarization filters

Nicole Pfiester, Corey Shemelya, Thomas Rotter, Ganesh Balakrishnan, Thomas Vandervelde

Proceedings Volume 8982, 89820M (2014) https://doi.org/10.1117/12.2040827

KEYWORDS: Metamaterials, Gallium arsenide, Digital signal processing, Polarization, Semiconducting wafers, Dielectric polarization, Thin films, Digital filtering, Optical lithography, Sapphire

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Proceedings Article | 3 March 2014 Paper

Beam combination of multiple vertical external cavity surface emitting lasers via volume Bragg gratings

Chunte Lu, William Roach, Genesh Balakrishnan, Alexander Albrecht, Jerome Moloney, Leonid Glebov

Proceedings Volume 8966, 89660Y (2014) https://doi.org/10.1117/12.2039666

KEYWORDS: Reflectivity, Vertical external cavity surface emitting lasers, Fiber Bragg gratings, Holography, Diffraction, Output couplers, Optical design, Near infrared, Multiplexing, Optical filters

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Proceedings Article | 25 March 2013 Paper

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

N. Rahimi, A. Aragon, O. Romero, D. Kim, N. B. Traynor, T. Rotter, G. Balakrishnan, S. Mukherjee, L. Lester

Proceedings Volume 8620, 86201K (2013) https://doi.org/10.1117/12.2003392

KEYWORDS: Gold, Gallium antimonide, Platinum, Germanium, Annealing, Gallium arsenide, Palladium, Resistance, Nickel, Temperature metrology

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Proceedings Article | 26 February 2013 Paper

TEM based analysis of III-Sb VECSELs on GaAs substrates for improved laser performance

P. Ahirwar, D. Shima, T. Rotter, S. P. Clark, S. Addamane, C. Hains, L. Dawson, G. Balakrishnan, R. Bedford, Y. Lai, A. Laurain, J. Hader, J. Moloney

Proceedings Volume 8606, 86060E (2013) https://doi.org/10.1117/12.2005301

KEYWORDS: Gallium arsenide, Gallium antimonide, Quantum wells, Interfaces, Transmission electron microscopy, Phonons, Semiconductor lasers, Neodymium, Image resolution

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Proceedings Article | 26 February 2013 Paper

Investigation of InAs quantum dashes for 1.45-2.1 µm vertical external cavity surface emitting laser active regions

T. Rotter, P. Ahirwar, D. Shima, S. Addamane, C. Hains, L. R. Dawson, G. Balakrishnan

Proceedings Volume 8606, 86060D (2013) https://doi.org/10.1117/12.2005427

KEYWORDS: Indium arsenide, Quantum wells, Gallium arsenide, Quantum dots, Gallium antimonide, Electroluminescent displays, Etching, Transmission electron microscopy, Semiconducting wafers, Crystals

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Proceedings Article | 15 February 2012 Paper

Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance

Alexandre Laurain, Jörg Hader, Yi-Ying Lai, Tsuei-Lian Wang, Mike Yarborough, Ganesh Balakrishnan, Thomas Rotter, Pankaj Ahirwar, Jerome Moloney

Proceedings Volume 8242, 82420S (2012) https://doi.org/10.1117/12.909412

KEYWORDS: Semiconductors, Pulsed laser operation, Mirrors, Gallium arsenide, Quantum wells, Continuous wave operation, Photons, Gallium antimonide, Data modeling

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Proceedings Article | 8 February 2012 Paper

Intracavity laser cooling using a VECSEL

Alexander Albrecht, Denis Seletskiy, Jeffrey Cederberg, Alberto Di Lieto, Mauro Tonelli, Jerome Moloney, Ganesh Balakrishnan, Mansoor Sheik-Bahae

Proceedings Volume 8275, 827505 (2012) https://doi.org/10.1117/12.910329

KEYWORDS: Crystals, Mirrors, Quantum wells, Luminescence, Absorption, Cryocoolers, Solids, Laser crystals, Semiconductors, Laser applications

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Proceedings Article | 22 February 2011 Paper

Power scaling of cw and pulsed IR and mid-IR OPSLs

J. Moloney, J. Hader, T.-L. Wang, Yi. Ying, Y. Kaneda, J. M. Yarborough, T. Rotter, G. Balakrishnan, C. Hains, S. Koch, W. Stolz, B. Kunert, R. Bedford

Proceedings Volume 7919, 79190S (2011) https://doi.org/10.1117/12.874201

KEYWORDS: Mid-IR, Quantum wells, Reflectivity, Gallium arsenide, Semiconductor lasers, Semiconductors, Etching, Reflection, Absorption

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Proceedings Article | 22 February 2011 Paper

Lattice mismatched growth for mid-IR VECSELs

G. Balakrishnan, T. Rotter, P. Ahirwar, S. Clark, V. Patel, A. Albrecht, C. Hains, Yi-Ying Lai, T. Wang, J. Yarborough, D. Mathine, Yushi Kaneda, Jerome Moloney, Jörg Hader, S. Koch

Proceedings Volume 7919, 79190G (2011) https://doi.org/10.1117/12.874234

KEYWORDS: Gallium arsenide, Gallium antimonide, Quantum wells, Mid-IR, Interfaces, Distributed Bragg reflectors, Epitaxy, Antimony, Semiconducting wafers, Crystals

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Proceedings Article | 22 February 2011 Paper

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

Alexander Albrecht, Thomas Rotter, Christopher Hains, Andreas Stintz, Guofeng Xin, Tsuei-Lian Wang, Yushi Kaneda, Jerome Moloney, Kevin Malloy, Ganesh Balakrishnan

Proceedings Volume 7919, 791904 (2011) https://doi.org/10.1117/12.874321

KEYWORDS: Indium arsenide, Gallium arsenide, Diamond, Chemical vapor deposition, Mirrors, Semiconductor lasers, Heatsinks, Quantum dots, Indium, Output couplers

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Proceedings Article | 14 February 2008 Paper

Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 um VECSELs

G. Balakrishnan, T. J. Rotter, A. Jallipalli, L. R. Dawson, D. L. Huffaker

Proceedings Volume 6871, 687111 (2008) https://doi.org/10.1117/12.776256

KEYWORDS: Gallium arsenide, Gallium antimonide, Quantum wells, Transmission electron microscopy, Luminescence, Antimony, Laser applications, Interfaces, Diffraction, Optical pumping

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Proceedings Article | 5 February 2008 Paper

Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates

J. Tatebayashi, A. Jallipalli, M. Kutty, S. Huang, N. Nuntawong, G. Balakrishnan, L. Dawson, D. Huffaker

Proceedings Volume 6909, 69090M (2008) https://doi.org/10.1117/12.775340

KEYWORDS: Silicon, Vertical cavity surface emitting lasers, Semiconductor lasers, Gallium antimonide, Quantum wells, Interfaces, Avalanche photodetectors, Gallium arsenide, Fiber optic communications, Aluminum

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Proceedings Article | 10 September 2007 Paper

Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays

D. Huffaker, G. Balakrishnan, A. Jallipalli, M. Kutty, S. Huang, L. Dawson

Proceedings Volume 6775, 67750L (2007) https://doi.org/10.1117/12.737224

KEYWORDS: Silicon, Semiconductor lasers, Avalanche photodetectors, Gallium antimonide, Antimony, Quantum wells, Gallium, Aluminum, Transmission electron microscopy, Semiconducting wafers

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Showing 5 of 36 publications

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