Dr. George Papavieros Profile

Dr. George Papavieros

COO at Nanometrisis PC

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Publications (15)

SPIE Journal Paper | 19 August 2021

Measuring line edge roughness with pixel sizes larger than its value: a mathematical and computational approach

George Papavieros, Vassilios Constantoudis, Nikolaos Vouroutzis, Evangelos Gogolides

JM3, Vol. 20, Issue 03, 034001, (August 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.3.034001

KEYWORDS: Line edge roughness, Scanning electron microscopy, Edge detection, Metrology, Lithography, Edge roughness, Critical dimension metrology, Mathematics, Image processing, Statistical analysis

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Proceedings Article | 22 February 2021 Presentation

Pixelization effect in SEM images: investigating the effect of the selected pixel size on LER measurement

George Papavieros, Vassilios Constantoudis, Evangelos Gogolides

Proceedings Volume 11611, 116111C (2021) https://doi.org/10.1117/12.2592175

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Proceedings Article | 24 March 2020 Presentation

Characterization of defects in line/space patterns (Conference Presentation)

Vassilios Constantoudis, Bradley Williams, Nikolaos Kehagias, George Papavieros, Clivia Sotomoyor Torres, Evangelos Gogolides

Proceedings Volume 11325, 113250U (2020) https://doi.org/10.1117/12.2559411

KEYWORDS: Nanostructures, Feature extraction, Nanoimprint lithography, 3D metrology, Process control, Materials processing, Metrology, Error analysis, Scanning electron microscopy, Atomic force microscopy

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Proceedings Article | 26 March 2019 Paper

Defects in nano-imprint lithography line patterns: computational modelling and measurement accuracy

Vassilios Constantoudis, Guy Whitworth, Nikolaos Kehagias, George Papavieros, Clivia Sotomoyor Torres, Evangelos Gogolides

Proceedings Volume 10958, 109581K (2019) https://doi.org/10.1117/12.2523931

KEYWORDS: Scanning electron microscopy, Image processing, Statistical analysis, Modeling, Image segmentation, Nanoimprint lithography, Metrology, Computational modeling, Image acquisition, Computer simulations, Defect inspection

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Proceedings Article | 26 March 2019 Paper

Edge placement error and line edge roughness

Vassilios Constantoudis, George Papavieros, Evangelos Gogolides

Proceedings Volume 10959, 109591F (2019) https://doi.org/10.1117/12.2523419

KEYWORDS: Line edge roughness, Edge roughness, Stochastic processes, Modeling, Line width roughness, Computational modeling, Optical proximity correction, Image segmentation, Critical dimension metrology, Manufacturing

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Proceedings Article | 26 March 2019 Presentation + Paper

Deep learning nanometrology of line edge roughness

Eva Giannatou, Vassilios Constantoudis, George Papavieros, Harria Papagrorgiou, Gian Francesco Lorusso, Vito Rutigliani, Frieda van Roey, Evangelos Gogolides

Proceedings Volume 10959, 1095920 (2019) https://doi.org/10.1117/12.2520941

KEYWORDS: Line edge roughness, Scanning electron microscopy, Denoising, Signal to noise ratio, Image processing, Data modeling, Image denoising, Edge detection, Interference (communication), Image filtering

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Proceedings Article | 26 March 2019 Paper

Denoising line edge roughness measurement using hidden Markov models

George Papavieros, Ioannis Kontoyiannis, Vassilios Constantoudis, Evangelos Gogolides

Proceedings Volume 10959, 109592Z (2019) https://doi.org/10.1117/12.2523422

KEYWORDS: Data modeling, Line edge roughness, Denoising, Matrices, Scanning electron microscopy, Edge detection, Machine learning, Image processing, Detection and tracking algorithms, Algorithm development

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SPIE Journal Paper | 10 November 2018

Setting up a proper power spectral density and autocorrelation analysis for material and process characterization

Vito Rutigliani, Gian Francesco Lorusso, Danilo De Simone, Frederic Lazzarino, George Papavieros, Evangelos Gogolides, Vassilios Constantoudis, Chris A. Mack

JM3, Vol. 17, Issue 04, 041016, (November 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.041016

KEYWORDS: Scanning electron microscopy, Line edge roughness, Materials processing, Extreme ultraviolet, Line width roughness, Etching, Lithography, Image filtering, Material characterization, Image acquisition

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SPIE Journal Paper | 13 October 2018

Line edge roughness metrology: recent challenges and advances toward more complete and accurate measurements

Vassilios Constantoudis, George Papavieros, Gian Lorusso, Vito Rutigliani, Frieda Van Roey, Evangelos Gogolides

JM3, Vol. 17, Issue 04, 041014, (October 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.041014

KEYWORDS: Line edge roughness, Scanning electron microscopy, Fractal analysis, Metrology, Edge roughness, Etching, Lithography, Image processing, Optical lithography, Image segmentation

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Proceedings Article | 30 March 2018 Presentation + Paper

Setting up a proper power spectral density (PSD) and autocorrelation analysis for material and process characterization

Vito Rutigliani, Gian Francesco Lorusso, Danilo De Simone, Frederic Lazzarino, Gijsbert Rispens , George Papavieros, Evangelos Gogolides, Vassilios Constantoudis, Chris Mack

Proceedings Volume 10585, 105851K (2018) https://doi.org/10.1117/12.2297264

KEYWORDS: Materials processing, Line width roughness, Image filtering, Line edge roughness, Material characterization, Image acquisition, Image processing, Scanning electron microscopy, Extreme ultraviolet, Double patterning technology

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Proceedings Article | 20 March 2018 Paper

Computational nanometrology of line-edge roughness: noise effects, cross-line correlations and the role of etch transfer

Vassilios Constantoudis, George Papavieros, Gian Lorusso, Vito Rutigliani, Frieda Van Roey, Evangelos Gogolides

Proceedings Volume 10589, 105890Y (2018) https://doi.org/10.1117/12.2306282

KEYWORDS: Line edge roughness, Etching, Scanning electron microscopy, Metrology, Lithography, Edge roughness, Image processing, Optical lithography, Image analysis, Statistical analysis

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The aim of this paper is to investigate the role of etch transfer in two challenges of LER metrology raised by recent evolutions in lithography: the effects of SEM noise and the cross-line and edge correlations.

The first comes from the ongoing scaling down of linewidths, which dictates SEM imaging with less scanning frames to reduce specimen damage and hence with more noise. During the last decade, it has been shown that image noise can be an important budget of the measured LER while systematically affects and alter the PSD curve of LER at high frequencies. A recent method for unbiased LER measurement is based on the systematic Fourier or correlation analysis to decompose the effects of noise from true LER (Fourier-Correlation filtering method). The success of the method depends on the PSD and HHCF curve. Previous experimental and model works have revealed that etch transfer affects the PSD of LER reducing its high frequency values. In this work, we estimate the noise contribution to the biased LER through PSD flat floor at high frequencies and relate it with the differences between the PSDs of lithography and etched LER. Based on this comparison, we propose an improvement of the PSD/HHCF-based method for noise-free LER measurement to include the missed high frequency real LER.

The second issue is related with the increased density of lithographic patterns and the special characteristics of DSA and MP lithography patterns exhibits. In a previous work, we presented an enlarged LER characterization methodology for such patterns, which includes updated versions of the old metrics along with new metrics defined and developed to capture cross-edge and cross-line correlations. The fundamental concept has been the Line Center Roughness (LCR), the edge c-factor and the line c-factor correlation function and length quantifying the line fluctuations and the extent of cross-edge and cross-line correlations. In this work, we focus on the role of etch steps on cross-edge and line correlation metrics in SAQP data. We find that the spacer etch steps reduce edge correlations while etch steps with pattern transfer increase these. Furthermore, the density doubling and quadrupling increase edge correlations as well as cross-line correlations.

Proceedings Article | 13 March 2018 Paper

Allowable SEM noise for unbiased LER measurement

George Papavieros, Vassilios Constantoudis, Evangelos Gogolides

Proceedings Volume 10585, 105851W (2018) https://doi.org/10.1117/12.2306509

KEYWORDS: Scanning electron microscopy, Line edge roughness, Metrology, Edge roughness, Inspection, Process control, Optical lithography, Line width roughness, Error analysis

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Proceedings Article | 13 March 2018 Paper

Multifractal analysis of line-edge roughness

Vassilios Constantoudis, George Papavieros, Gian Lorusso, Vito Rutigliani, Frieda van Roey, Evangelos Gogolides

Proceedings Volume 10585, 1058534 (2018) https://doi.org/10.1117/12.2306508

KEYWORDS: Line edge roughness, Fractal analysis, Scanning electron microscopy, Lithography, Etching, Image processing, Image segmentation, Edge roughness, Optical lithography, Metrology

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In this paper, we propose to rethink the issue of LER characterization on the basis of the fundamental concept of symmetries. In LER one can apply two kinds of symmetries: a) the translation symmetry characterized by periodicity and b) the scaling symmetry quantified by the fractal dimension. Up to now, a lot of work has been done on the first symmetry since the Power Spectral Density (PSD), which has been extensively studied recently, is a decomposition of LER signal into periodic edges and quantification of the ‘power’ of each periodicity at the real LER. The aim of this paper is to focus on the second symmetry of scaling invariance. Similarly to PSD, we introduce the multifractal approach in LER analysis which generalizes the scaling analysis of standard (mono)fractal theory and decomposes LER into fractal edges characterized by specific fractal dimensions. The main benefit of multifractal analysis is that it enables the characterization of the multi-scaling contributions of different mechanisms involved in LER formation. In the first part of our work, we present concisely the multifractal theory of line edges and utilize the Box Counting method for its implementation and the extraction of the multifractal spectrum. Special emphasis is given on the explanation of the physical meaning of the obtained multifractal spectrum whose asymmetry quantifies the degree of multifractality. In addition, we propose the distinction between peak-based and valley-based multifractality according to whether the asymmetry of the multifractal spectrum is coming from the sharp line material peaks to space regions or from the cavities of line materis (edge valleys). In the second part, we study systematically the evolution of LER multifractal spectrum during the first successive steps of a multiple (quadruple) patterning lithography technique and find an interesting transition from a peak-based multifractal behavior in the first litho resist LER to a valley-based multifractality caused mainly by the effects of etch pattern transfer steps.

Proceedings Article | 28 September 2017 Paper

Line edge roughness measurement through SEM images: effects of image digitization and their mitigation

George Papavieros, Vassilios Constantoudis

Proceedings Volume 10446, 104460K (2017) https://doi.org/10.1117/12.2294060

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SPIE Journal Paper | 11 April 2017

Challenges in line edge roughness metrology in directed self-assembly lithography: placement errors and cross-line correlations

Vassilios Constantoudis, George Papavieros, Evangelos Gogolides, Alessandro Vaglio Pret, Hari Pathangi, Roel Gronheid

JM3, Vol. 16, Issue 02, 024001, (April 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.2.024001

KEYWORDS: Directed self assembly, Line edge roughness, Line width roughness, Lithography, Metrology, Scanning electron microscopy, Silicon, Critical dimension metrology, Image segmentation, Picosecond phenomena

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Showing 5 of 15 publications

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