Projection Mask-Less Patterning (PMLP) is based on many hundred thousands of ion beams working in parallel. A PMLP
proof-of-concept tool has been realized as part of the European project CHARPAN (Charged Particle Nanotech) and has
been presented at SPIE Photomask BACUS 2007. Using 10 keV protons, 16nm hp resolution has been demonstrated in non-
CAR materials (HSQ) with 25μC/cm2 exposure dose. The system is upgraded to a CHARPAN Engineering Tool (CHET)
with a laser-interferometer controlled vacuum stage and a CMOS based programmable Aperture Plate System (APS)
providing ca. 40,000 beams with < 20nm spot size. The engineering of an ion Mask Exposure Tool (iMET) for the 22nm hp
mask node has been started; main iMET features are discussed.
With the willingness of the semiconductor industry to push manufacturing costs down, the mask
less lithography solution represents a promising option to deal with the cost and complexity concerns
about the optical lithography solution. Though a real interest, the development of multi beam tools still
remains in laboratory environment. In the frame of the seventh European Framework Program (FP7), a
new project, MAGIC, started January 1st 2008 with the objective to strengthen the development of the
mask less technology. The aim of the program is to develop multi beam systems from MAPPER and
IMS nanofabrication technologies and the associated infrastructure for the future tool usage. This paper
draws the present status of multi beam lithography and details the content and the objectives of the
MAGIC project.
Projection Mask-Less Lithography (PML2) is a potentially cost-effective multi electron-beam solution for the 32nm-node
and beyond. PML2 is targeted on using hundreds of thousands of individually addressable electron-beams working
in parallel, thereby pushing the potential throughput into the wafers per hour regime. With resolution limits <10nm,
PML2 is designed to meet the requirements of several upcoming tool generations.
A PML2 proof-of-concept setup was realized within the framework of the European RIMANA project. It contains all
crucial components of a full-fledged PML2 tool and unambiguously demonstrates the operability of multi electron-beam
projection optics with 200x reduction. In the PML2 proof-of-concept system more than 2000 switchable beams are
generated by a programmable aperture plate system (APS) and projected onto wafer level with 200x demagnification.
Current density (~2 A/cm2) and total current (~10 pA) of each beam are the same as in future PML2 tools, resulting in a
calculated base resolution below 10nm. The PML2 proof-of-concept column has been successfully tested using
resolution templates, verifying 200x reduction and the predicted 22nm hp resolution capability. Furthermore, first
custom designed 32nm hp structures were printed into resist coated Si wafers using an APS test-unit.
Based on the inputs obtained by the PML2 proof-of-concept system and detailed electron-optical calculations, a fully
industry-compatible PML2 Alpha-tool will be realized within the European MAGIC project. Together with the
infrastructure developed within MAGIC, this PML2 Alpha-tool promises to herald the introduction of mask-less
lithography into the industrial environment.
The reliable and cost-effective fabrication of 2D and 3D structured nano-surfaces is prerequisite for a number of industrial
and emerging applications: (i) leading-edge complex masks, (ii) high precision nano-imprint templates, (iii) nano-functionalized
surfaces and 3D structures for applications in nano-photonics, nano-magnetics, and nano-biotechnology.
Projection Mask-Less Patterning (PMLP) is based on many hundred thousands of ion beams working in parallel. A PMLP
proof-of-concept tool has been realized as part of the European project CHARPAN (Charged Particle Nanotech;
www.charpan.com). The novel ion beam projection optics with 200x reduction shows 16nm half pitch resolution. First
results with a programmable aperture plate system have been achieved demonstrating high accuracy and flexible pattern
fabrication.
Hans Loeschner, Gerhard Stengl, Herbert Buschbeck, A. Chalupka, Gertraud Lammer, Elmar Platzgummer, Herbert Vonach, Patrick de Jager, Rainer Kaesmaier, Albrecht Ehrmann, Stefan Hirscher, Andreas Wolter, Andreas Dietzel, Ruediger Berger, Hubert Grimm, Bruce Terris, Wilhelm Bruenger, Gerhard Gross, Olaf Fortagne, Dieter Adam, Michael Boehm, Hans Eichhorn, Reinhard Springer, Joerg Butschke, Florian Letzkus, Paul Ruchhoeft, John Wolfe
Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In cooperation with IBM Storage Technology Division, ion projection patterning of magnetic media layers has been demonstrated. With masked ion beam proximity techniques, unique capabilities for lithography on nonplanar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBL) and masked ion beam direct structuring (MIBS) tool with sub-20-nm resolution capability within 88-mm□ exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume projection maskless lithography (projection-ML2) is discussed. In the case of projection-ML2 there are advantages of using electrons instead of ions. Including gray scaling, an improved concept for a ⩽50-nm projection-ML2 system is presented with the potential to meet a throughput of 20 wafers per hour (300 mm).
In spite of the comparatively modest level of effort devoted to ion projection lithography, the results obtained so far indicate that the technology is highly promising. Accordingly, a $36M program has been launched in Europe to develop a full field, IPL process tool.
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