Dr. Guangyu Liu Profile

Dr. Guangyu Liu

Ph.D. at King Abdullah Univ of Science and Technology

SPIE Involvement:

Author

Publications (10)

SPIE Journal Paper | 12 July 2018 Open Access

Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices

Jung-Wook Min, Davide Priante, Malleswararao Tangi, Guangyu Liu, Chun Hong Kang, Aditya Prabaswara, Chao Zhao, Latifah Al-Maghrabi, Yazeed Alaskar, Abdulrahman Albadri, Ahmed Alyamani, Tien Khee Ng, Boon Ooi

JNP, Vol. 12, Issue 04, 043511, (July 2018) https://doi.org/10.1117/12.10.1117/1.JNP.12.043511

KEYWORDS: Gallium nitride, Silicon, Ultraviolet radiation, Light emitting diodes, Metals, Gallium, Aluminum, Molecular beams, Doping, Polarization

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Proceedings Article | 28 February 2012 Paper

Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Guangyu Liu, Jing Zhang, Hongping Zhao, Nelson Tansu

Proceedings Volume 8262, 82621F (2012) https://doi.org/10.1117/12.909633

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Gallium nitride, Quantum efficiency, Internal quantum efficiency, Metalorganic chemical vapor deposition, Electroluminescence, Semiconductors, Solid state lighting

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Proceedings Article | 4 March 2011 Paper

Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions

Jing Zhang, Hua Tong, Guangyu Liu, Juan Herbsommer, G. S. Huang, Nelson Tansu

Proceedings Volume 7939, 79390O (2011) https://doi.org/10.1117/12.875125

KEYWORDS: Thermoelectric materials, Gallium nitride, Sapphire, Temperature metrology, Scattering, Silica, Thin films, Metals, Vapor phase epitaxy, Indium gallium nitride

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Proceedings Article | 3 March 2011 Paper

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao, Jing Zhang, Guangyu Liu, Takahiro Toma, Jonathan Poplawsky, Volkmar Dierolf, Nelson Tansu

Proceedings Volume 7939, 793905 (2011) https://doi.org/10.1117/12.875002

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Metalorganic chemical vapor deposition, Gallium nitride, Chemical elements, Polarization, Electron beams, Diodes, Optical matrix switches

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Proceedings Article | 10 February 2011 Paper

Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering

Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Renbo Song, Takahiro Toma, Le Zhao, G. S. Huang

Proceedings Volume 7954, 795418 (2011) https://doi.org/10.1117/12.875901

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride, Surface plasmons, Gold, Silver, Microlens array, Epitaxy, Internal quantum efficiency

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Proceedings Article | 12 March 2010 Paper

Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3ω method

Hua Tong, Jing Zhang, Hongping Zhao, Guangyu Liu, Vincent Handara, Juan Herbsommer, Nelson Tansu

Proceedings Volume 7602, 76020U (2010) https://doi.org/10.1117/12.842509

KEYWORDS: Indium nitride, Gallium nitride, Sapphire, Thin films, Diffusion, Thermal modeling, Metals, Ceramics, Amplifiers, Multilayers

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Proceedings Article | 12 March 2010 Paper

Novel device concepts for high-efficiency InGaN-based light-emitting diodes

Hongping Zhao, Guangyu Liu, Yik-Khoon Ee, Xiao-Hang Li, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu

Proceedings Volume 7602, 76021G (2010) https://doi.org/10.1117/12.842869

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Gallium nitride, Sapphire, Microlens array, Internal quantum efficiency, Quantum efficiency, Microlens, Active optics

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Proceedings Article | 26 February 2010 Paper

Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells

Guangyu Liu, Hongping Zhao, Nelson Tansu

Proceedings Volume 7597, 75971K (2010) https://doi.org/10.1117/12.843054

KEYWORDS: Quantum wells, Gallium nitride, Aluminum nitride, Scattering, Phonons, Laser scattering, Quantum cascade lasers, Polarization, Electrons, Photons

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Proceedings Article | 12 February 2010 Paper

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes

Hongping Zhao, Guangyu Liu, Nelson Tansu

Proceedings Volume 7617, 76170W (2010) https://doi.org/10.1117/12.842742

KEYWORDS: Surface plasmons, Quantum wells, Silver, Gallium nitride, Indium gallium nitride, Gold, Metals, Light emitting diodes, Semiconductors, Thin films

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Proceedings Article | 3 February 2009 Paper

Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, Ronald Arif, G. Huang, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 7231, 72310E (2009) https://doi.org/10.1117/12.808542

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride, Electroluminescence, Calibration, Metalorganic chemical vapor deposition, Structural design, Polarization, Sapphire

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Showing 5 of 10 publications

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